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Artigo de periodico
Highly symmetric random one-dimensional spin models (2019)
Quito, V. L.; Lopes, P. L. S.; Hoyos, José Abel ; Miranda, E.
Source: Physical Review B. Unidade: IFSC
Subjects: MAGNETISMO, FÍSICA TEÓRICA, SPIN
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ABNT
QUITO, V. L. et al. Highly symmetric random one-dimensional spin models. Physical Review B, v. 100, n. 22, p. 224407-1-224407-23, 2019Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.100.224407. Acesso em: 26 set. 2024.
APA
Quito, V. L., Lopes, P. L. S., Hoyos, J. A., & Miranda, E. (2019). Highly symmetric random one-dimensional spin models. Physical Review B, 100( 22), 224407-1-224407-23. doi:10.1103/PhysRevB.100.224407
NLM
Quito VL, Lopes PLS, Hoyos JA, Miranda E. Highly symmetric random one-dimensional spin models [Internet]. Physical Review B. 2019 ; 100( 22): 224407-1-224407-23.[citado 2024 set. 26 ] Available from: https://doi.org/10.1103/PhysRevB.100.224407
Vancouver
Quito VL, Lopes PLS, Hoyos JA, Miranda E. Highly symmetric random one-dimensional spin models [Internet]. Physical Review B. 2019 ; 100( 22): 224407-1-224407-23.[citado 2024 set. 26 ] Available from: https://doi.org/10.1103/PhysRevB.100.224407
Artigo de periodico
Complex mixed state of the Pauli-limited superconductor CeCoIn5 (2012)
Gratens, Xavier Pierre Marie ; Mendonça-Ferreira, L; Kopelevich, Y; Oliveira Jr., N. F.; Urbano, R R; Ribeiro, R A; Movshovich, R; Sarrao, J L; Thompson, J D; Fisk, Z; Pagliuso, P G
Source: Physical Review B. Unidade: IF
Subjects: ESPECTROS, FLUORESCÊNCIA
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ABNT
GRATENS, Xavier Pierre Marie et al. Complex mixed state of the Pauli-limited superconductor CeCoIn5. Physical Review B, v. Phys. Re B 85, 2012Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.85.054502. Acesso em: 26 set. 2024.
APA
Gratens, X. P. M., Mendonça-Ferreira, L., Kopelevich, Y., Oliveira Jr., N. F., Urbano, R. R., Ribeiro, R. A., et al. (2012). Complex mixed state of the Pauli-limited superconductor CeCoIn5. Physical Review B, Phys. Re B 85. doi:10.1103/PhysRevB.85.054502
NLM
Gratens XPM, Mendonça-Ferreira L, Kopelevich Y, Oliveira Jr. NF, Urbano RR, Ribeiro RA, Movshovich R, Sarrao JL, Thompson JD, Fisk Z, Pagliuso PG. Complex mixed state of the Pauli-limited superconductor CeCoIn5 [Internet]. Physical Review B. 2012 ;Phys. Re B 85[citado 2024 set. 26 ] Available from: https://doi.org/10.1103/PhysRevB.85.054502
Vancouver
Gratens XPM, Mendonça-Ferreira L, Kopelevich Y, Oliveira Jr. NF, Urbano RR, Ribeiro RA, Movshovich R, Sarrao JL, Thompson JD, Fisk Z, Pagliuso PG. Complex mixed state of the Pauli-limited superconductor CeCoIn5 [Internet]. Physical Review B. 2012 ;Phys. Re B 85[citado 2024 set. 26 ] Available from: https://doi.org/10.1103/PhysRevB.85.054502
Artigo de periodico
Polaron liquid-gas crossover at the orthorhombic-rhombohedral transition of manganites (2008)
Souza, J A; Terashita, H; Granado, E; Jardim, R. F.; Oliveira Jr., N. F.; Muccillo, R
Source: Physical Review B. Unidade: IF
Assunto: MUDANÇA DE FASE
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ABNT
SOUZA, J A et al. Polaron liquid-gas crossover at the orthorhombic-rhombohedral transition of manganites. Physical Review B, v. 78, n. 5, p. 054411/1-054411/7, 2008Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000078000005054411000001&idtype=cvips&prog=normal. Acesso em: 26 set. 2024.
APA
Souza, J. A., Terashita, H., Granado, E., Jardim, R. F., Oliveira Jr., N. F., & Muccillo, R. (2008). Polaron liquid-gas crossover at the orthorhombic-rhombohedral transition of manganites. Physical Review B, 78( 5), 054411/1-054411/7. doi:10.1103/physrevb.78.054411
NLM
Souza JA, Terashita H, Granado E, Jardim RF, Oliveira Jr. NF, Muccillo R. Polaron liquid-gas crossover at the orthorhombic-rhombohedral transition of manganites [Internet]. Physical Review B. 2008 ; 78( 5): 054411/1-054411/7.[citado 2024 set. 26 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000078000005054411000001&idtype=cvips&prog=normal
Vancouver
Souza JA, Terashita H, Granado E, Jardim RF, Oliveira Jr. NF, Muccillo R. Polaron liquid-gas crossover at the orthorhombic-rhombohedral transition of manganites [Internet]. Physical Review B. 2008 ; 78( 5): 054411/1-054411/7.[citado 2024 set. 26 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000078000005054411000001&idtype=cvips&prog=normal
Artigo de periodico
Magnetic properties of GaN/MnxGa1-xN digital heterostructures: first-principles and Monte Carlo calculations (2006)
Marques, M; FERROMAGNETISMO; Ferreira, L G; Teles, L. K.; Scolfaro, Luisa Maria Ribeiro; Furthmuller, J; Bechstedt, F
Source: Physical Review B. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
MARQUES, M et al. Magnetic properties of GaN/MnxGa1-xN digital heterostructures: first-principles and Monte Carlo calculations. Physical Review B, v. 73, n. 22, p. 224409, 2006Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000073000022224409000001&idtype=cvips&prog=normal. Acesso em: 26 set. 2024.
APA
Marques, M., FERROMAGNETISMO,, Ferreira, L. G., Teles, L. K., Scolfaro, L. M. R., Furthmuller, J., & Bechstedt, F. (2006). Magnetic properties of GaN/MnxGa1-xN digital heterostructures: first-principles and Monte Carlo calculations. Physical Review B, 73( 22), 224409. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000073000022224409000001&idtype=cvips&prog=normal
NLM
Marques M, FERROMAGNETISMO, Ferreira LG, Teles LK, Scolfaro LMR, Furthmuller J, Bechstedt F. Magnetic properties of GaN/MnxGa1-xN digital heterostructures: first-principles and Monte Carlo calculations [Internet]. Physical Review B. 2006 ; 73( 22): 224409.[citado 2024 set. 26 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000073000022224409000001&idtype=cvips&prog=normal
Vancouver
Marques M, FERROMAGNETISMO, Ferreira LG, Teles LK, Scolfaro LMR, Furthmuller J, Bechstedt F. Magnetic properties of GaN/MnxGa1-xN digital heterostructures: first-principles and Monte Carlo calculations [Internet]. Physical Review B. 2006 ; 73( 22): 224409.[citado 2024 set. 26 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000073000022224409000001&idtype=cvips&prog=normal
Artigo de periodico
Statistical model applied to "A IND.X" "B IND.Y" "C IND.1-X-Y" D quaternary alloys: bond lengths and energy gaps of "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X (X=As, P, or N) systems (2006)
Marques, M; Teles, L. K.; Ferreira, L G; Scolfaro, L M R
Source: Physical Review B. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, PROPRIEDADES DOS MATERIAIS
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ABNT
MARQUES, M et al. Statistical model applied to "A IND.X" "B IND.Y" "C IND.1-X-Y" D quaternary alloys: bond lengths and energy gaps of "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X (X=As, P, or N) systems. Physical Review B, v. 73, n. 23, p. 235205, 2006Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000073000023235205000001&idtype=cvips&prog=normal. Acesso em: 26 set. 2024.
APA
Marques, M., Teles, L. K., Ferreira, L. G., & Scolfaro, L. M. R. (2006). Statistical model applied to "A IND.X" "B IND.Y" "C IND.1-X-Y" D quaternary alloys: bond lengths and energy gaps of "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X (X=As, P, or N) systems. Physical Review B, 73( 23), 235205. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000073000023235205000001&idtype=cvips&prog=normal
NLM
Marques M, Teles LK, Ferreira LG, Scolfaro LMR. Statistical model applied to "A IND.X" "B IND.Y" "C IND.1-X-Y" D quaternary alloys: bond lengths and energy gaps of "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X (X=As, P, or N) systems [Internet]. Physical Review B. 2006 ; 73( 23): 235205.[citado 2024 set. 26 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000073000023235205000001&idtype=cvips&prog=normal
Vancouver
Marques M, Teles LK, Ferreira LG, Scolfaro LMR. Statistical model applied to "A IND.X" "B IND.Y" "C IND.1-X-Y" D quaternary alloys: bond lengths and energy gaps of "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X (X=As, P, or N) systems [Internet]. Physical Review B. 2006 ; 73( 23): 235205.[citado 2024 set. 26 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000073000023235205000001&idtype=cvips&prog=normal
Artigo de periodico
Solid-state nuclear magnetic resonance study of relaxation processes in MEH-PPV (2005)
Bloise Júnior, Antonio Carlos; Azevêdo, Eduardo Ribeiro de ; Cossiello, R. F.; Bianchi, Rodrigo Fernando; Balogh, Debora Terezia; Faria, Roberto Mendonça ; Atvars, T. D. Z.; Bonagamba, Tito José
Source: Physical Review B. Unidades: IFSC, EP
Subjects: POLÍMEROS (MATERIAIS), RESSONÂNCIA MAGNÉTICA NUCLEAR
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ABNT
BLOISE JÚNIOR, Antonio Carlos et al. Solid-state nuclear magnetic resonance study of relaxation processes in MEH-PPV. Physical Review B, v. 71, n. 17, p. 174202-1-174202-4, 2005Tradução . . Disponível em: https://doi.org/10.1103/physrevb.71.174202. Acesso em: 26 set. 2024.
APA
Bloise Júnior, A. C., Azevêdo, E. R. de, Cossiello, R. F., Bianchi, R. F., Balogh, D. T., Faria, R. M., et al. (2005). Solid-state nuclear magnetic resonance study of relaxation processes in MEH-PPV. Physical Review B, 71( 17), 174202-1-174202-4. doi:10.1103/physrevb.71.174202
NLM
Bloise Júnior AC, Azevêdo ER de, Cossiello RF, Bianchi RF, Balogh DT, Faria RM, Atvars TDZ, Bonagamba TJ. Solid-state nuclear magnetic resonance study of relaxation processes in MEH-PPV [Internet]. Physical Review B. 2005 ; 71( 17): 174202-1-174202-4.[citado 2024 set. 26 ] Available from: https://doi.org/10.1103/physrevb.71.174202
Vancouver
Bloise Júnior AC, Azevêdo ER de, Cossiello RF, Bianchi RF, Balogh DT, Faria RM, Atvars TDZ, Bonagamba TJ. Solid-state nuclear magnetic resonance study of relaxation processes in MEH-PPV [Internet]. Physical Review B. 2005 ; 71( 17): 174202-1-174202-4.[citado 2024 set. 26 ] Available from: https://doi.org/10.1103/physrevb.71.174202
Artigo de periodico
Time-resolved thermal lens measurements of the thermo-optical properties of glasses at low temperature down to 20 K (2005)
Astrath, N. G. C.; Rohling, J. H.; Medina, A. N.; Bento, Antonio Carlos; Baesso, Mauro Luciano; Jacinto, Carlos; Catunda, Tomaz ; Lima, Sandro Marcio; Gandra, Flávio Guimarães; Bell, Maria José Valenzuela; Anjos, Vírgilio
Source: Physical Review B. Unidade: IFSC
Subjects: ÓPTICA, LASER, FOSFATOS
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ABNT
ASTRATH, N. G. C. et al. Time-resolved thermal lens measurements of the thermo-optical properties of glasses at low temperature down to 20 K. Physical Review B, v. 71, n. Ju 2005, p. 214202-1-214202-6, 2005Tradução . . Disponível em: https://doi.org/10.1109/cleoe.2005.1568117. Acesso em: 26 set. 2024.
APA
Astrath, N. G. C., Rohling, J. H., Medina, A. N., Bento, A. C., Baesso, M. L., Jacinto, C., et al. (2005). Time-resolved thermal lens measurements of the thermo-optical properties of glasses at low temperature down to 20 K. Physical Review B, 71( Ju 2005), 214202-1-214202-6. doi:10.1109/cleoe.2005.1568117
NLM
Astrath NGC, Rohling JH, Medina AN, Bento AC, Baesso ML, Jacinto C, Catunda T, Lima SM, Gandra FG, Bell MJV, Anjos V. Time-resolved thermal lens measurements of the thermo-optical properties of glasses at low temperature down to 20 K [Internet]. Physical Review B. 2005 ; 71( Ju 2005): 214202-1-214202-6.[citado 2024 set. 26 ] Available from: https://doi.org/10.1109/cleoe.2005.1568117
Vancouver
Astrath NGC, Rohling JH, Medina AN, Bento AC, Baesso ML, Jacinto C, Catunda T, Lima SM, Gandra FG, Bell MJV, Anjos V. Time-resolved thermal lens measurements of the thermo-optical properties of glasses at low temperature down to 20 K [Internet]. Physical Review B. 2005 ; 71( Ju 2005): 214202-1-214202-6.[citado 2024 set. 26 ] Available from: https://doi.org/10.1109/cleoe.2005.1568117
Artigo de periodico
Monte Carlo simulations applied to "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X quaternary alloys (X=As, P, N): a comparative study (2005)
Marques, M; Ferreira, L G; Teles, L. K.; Scolfaro, Luisa Maria Ribeiro
Source: Physical Review B. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, MÉTODO DE MONTE CARLO, MUDANÇA DE FASE, SUPERFÍCIE FÍSICA, SEMICONDUTORES
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ABNT
MARQUES, M et al. Monte Carlo simulations applied to "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X quaternary alloys (X=As, P, N): a comparative study. Physical Review B, v. 71, n. 20, p. 205204/1-205204/11, 2005Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000071000020205204000001&idtype=cvips&prog=normal. Acesso em: 26 set. 2024.
APA
Marques, M., Ferreira, L. G., Teles, L. K., & Scolfaro, L. M. R. (2005). Monte Carlo simulations applied to "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X quaternary alloys (X=As, P, N): a comparative study. Physical Review B, 71( 20), 205204/1-205204/11. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000071000020205204000001&idtype=cvips&prog=normal
NLM
Marques M, Ferreira LG, Teles LK, Scolfaro LMR. Monte Carlo simulations applied to "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X quaternary alloys (X=As, P, N): a comparative study [Internet]. Physical Review B. 2005 ; 71( 20): 205204/1-205204/11.[citado 2024 set. 26 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000071000020205204000001&idtype=cvips&prog=normal
Vancouver
Marques M, Ferreira LG, Teles LK, Scolfaro LMR. Monte Carlo simulations applied to "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X quaternary alloys (X=As, P, N): a comparative study [Internet]. Physical Review B. 2005 ; 71( 20): 205204/1-205204/11.[citado 2024 set. 26 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000071000020205204000001&idtype=cvips&prog=normal
Artigo de periodico
Comprehensive spectroscopic study of nitrogenated carbon nanotubes (2004)
Droppa Junior, R.; Ribeiro, C. T. M.; Zanatta, Antonio Ricardo; Santos, M. C.; Alvarez, F.
Source: Physical Review B. Unidade: IFSC
Subjects: ESPECTROSCOPIA RAMAN, CARBONO
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ABNT
DROPPA JUNIOR, R. et al. Comprehensive spectroscopic study of nitrogenated carbon nanotubes. Physical Review B, v. 69, n. Ja 2004, p. 045405-1-045405-9, 2004Tradução . . Disponível em: https://doi.org/10.1103/physrevb.69.045405. Acesso em: 26 set. 2024.
APA
Droppa Junior, R., Ribeiro, C. T. M., Zanatta, A. R., Santos, M. C., & Alvarez, F. (2004). Comprehensive spectroscopic study of nitrogenated carbon nanotubes. Physical Review B, 69( Ja 2004), 045405-1-045405-9. doi:10.1103/physrevb.69.045405
NLM
Droppa Junior R, Ribeiro CTM, Zanatta AR, Santos MC, Alvarez F. Comprehensive spectroscopic study of nitrogenated carbon nanotubes [Internet]. Physical Review B. 2004 ; 69( Ja 2004): 045405-1-045405-9.[citado 2024 set. 26 ] Available from: https://doi.org/10.1103/physrevb.69.045405
Vancouver
Droppa Junior R, Ribeiro CTM, Zanatta AR, Santos MC, Alvarez F. Comprehensive spectroscopic study of nitrogenated carbon nanotubes [Internet]. Physical Review B. 2004 ; 69( Ja 2004): 045405-1-045405-9.[citado 2024 set. 26 ] Available from: https://doi.org/10.1103/physrevb.69.045405
Artigo de periodico
Stabilization of substitutional Mn in silicon-based semiconductors (2004)
Silva, Antonio Jose Roque da; Fazzio, Adalberto; Antonelli, Alex
Source: Physical Review B. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
SILVA, Antonio Jose Roque da e FAZZIO, Adalberto e ANTONELLI, Alex. Stabilization of substitutional Mn in silicon-based semiconductors. Physical Review B, v. 70, p. 193205/1-193205/4, 2004Tradução . . Disponível em: https://doi.org/10.1103/physrevb.70.193205. Acesso em: 26 set. 2024.
APA
Silva, A. J. R. da, Fazzio, A., & Antonelli, A. (2004). Stabilization of substitutional Mn in silicon-based semiconductors. Physical Review B, 70, 193205/1-193205/4. doi:10.1103/physrevb.70.193205
NLM
Silva AJR da, Fazzio A, Antonelli A. Stabilization of substitutional Mn in silicon-based semiconductors [Internet]. Physical Review B. 2004 ; 70 193205/1-193205/4.[citado 2024 set. 26 ] Available from: https://doi.org/10.1103/physrevb.70.193205
Vancouver
Silva AJR da, Fazzio A, Antonelli A. Stabilization of substitutional Mn in silicon-based semiconductors [Internet]. Physical Review B. 2004 ; 70 193205/1-193205/4.[citado 2024 set. 26 ] Available from: https://doi.org/10.1103/physrevb.70.193205
Artigo de periodico
Theoretical study of strain-induced ordering in cubic 'In IND.X' 'Ga IND.1-X' N epitaxial layers (2004)
Teles, L. K.; Ferreira, L G; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Physical Review B. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, ESTRUTURA ATÔMICA (FÍSICA MODERNA)
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ABNT
TELES, L. K. et al. Theoretical study of strain-induced ordering in cubic 'In IND.X' 'Ga IND.1-X' N epitaxial layers. Physical Review B, 2004Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000069000024245317000001&idtype=cvips. Acesso em: 26 set. 2024.
APA
Teles, L. K., Ferreira, L. G., Scolfaro, L. M. R., & Leite, J. R. (2004). Theoretical study of strain-induced ordering in cubic 'In IND.X' 'Ga IND.1-X' N epitaxial layers. Physical Review B. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000069000024245317000001&idtype=cvips
NLM
Teles LK, Ferreira LG, Scolfaro LMR, Leite JR. Theoretical study of strain-induced ordering in cubic 'In IND.X' 'Ga IND.1-X' N epitaxial layers [Internet]. Physical Review B. 2004 ;[citado 2024 set. 26 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000069000024245317000001&idtype=cvips
Vancouver
Teles LK, Ferreira LG, Scolfaro LMR, Leite JR. Theoretical study of strain-induced ordering in cubic 'In IND.X' 'Ga IND.1-X' N epitaxial layers [Internet]. Physical Review B. 2004 ;[citado 2024 set. 26 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000069000024245317000001&idtype=cvips
Artigo de periodico
Microscopic description of the phase separation process in "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" N quaternary alloys (2004)
Marques, M; Teles, L. K.; Scolfaro, Luisa Maria Ribeiro; Ferreira, L G
Source: Physical Review B. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES, LUMINESCÊNCIA
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ABNT
MARQUES, M et al. Microscopic description of the phase separation process in "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" N quaternary alloys. Physical Review B, 2004Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000070000007073202000001&idtype=cvips. Acesso em: 26 set. 2024.
APA
Marques, M., Teles, L. K., Scolfaro, L. M. R., & Ferreira, L. G. (2004). Microscopic description of the phase separation process in "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" N quaternary alloys. Physical Review B. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000070000007073202000001&idtype=cvips
NLM
Marques M, Teles LK, Scolfaro LMR, Ferreira LG. Microscopic description of the phase separation process in "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" N quaternary alloys [Internet]. Physical Review B. 2004 ;[citado 2024 set. 26 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000070000007073202000001&idtype=cvips
Vancouver
Marques M, Teles LK, Scolfaro LMR, Ferreira LG. Microscopic description of the phase separation process in "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" N quaternary alloys [Internet]. Physical Review B. 2004 ;[citado 2024 set. 26 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000070000007073202000001&idtype=cvips
Artigo de periodico
Optical and x-ray diffraction studies on the incorporation of carbon as a dopant in cubic GaN (2003)
Fernandez, J R L; Cerdeira, F; Meneses, E A; Brasil, M J S P; Soares, J A N; Santos, A M; Noriega, O C; Leite, J. R.; As, D J; Köhler, U; Potthast, S; Pacheco Salazar, D G
Source: Physical Review B. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, MATERIAIS
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ABNT
FERNANDEZ, J R L et al. Optical and x-ray diffraction studies on the incorporation of carbon as a dopant in cubic GaN. Physical Review B, 2003Tradução . . Disponível em: https://doi.org/10.1103/physrevb.68.155204. Acesso em: 26 set. 2024.
APA
Fernandez, J. R. L., Cerdeira, F., Meneses, E. A., Brasil, M. J. S. P., Soares, J. A. N., Santos, A. M., et al. (2003). Optical and x-ray diffraction studies on the incorporation of carbon as a dopant in cubic GaN. Physical Review B. doi:10.1103/physrevb.68.155204
NLM
Fernandez JRL, Cerdeira F, Meneses EA, Brasil MJSP, Soares JAN, Santos AM, Noriega OC, Leite JR, As DJ, Köhler U, Potthast S, Pacheco Salazar DG. Optical and x-ray diffraction studies on the incorporation of carbon as a dopant in cubic GaN [Internet]. Physical Review B. 2003 ;[citado 2024 set. 26 ] Available from: https://doi.org/10.1103/physrevb.68.155204
Vancouver
Fernandez JRL, Cerdeira F, Meneses EA, Brasil MJSP, Soares JAN, Santos AM, Noriega OC, Leite JR, As DJ, Köhler U, Potthast S, Pacheco Salazar DG. Optical and x-ray diffraction studies on the incorporation of carbon as a dopant in cubic GaN [Internet]. Physical Review B. 2003 ;[citado 2024 set. 26 ] Available from: https://doi.org/10.1103/physrevb.68.155204
Artigo de periodico
Structure and melting of Bi nanocrystals embedded in a 'B IND.2''O IND.3-''Na IND.2'O glass (2002)
Kellermann, G; Craievich, Aldo Felix
Source: Physical Review B. Unidade: IF
Subjects: FÍSICA DE PARTÍCULAS (PROPRIEDADES TÉRMICAS), DIFRAÇÃO POR RAIOS X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
KELLERMANN, G e CRAIEVICH, Aldo Felix. Structure and melting of Bi nanocrystals embedded in a 'B IND.2''O IND.3-''Na IND.2'O glass. Physical Review B, v. 65, n. 13, p. 134204/1-134204/6, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000013134204000001&idtype=cvips. Acesso em: 26 set. 2024.
APA
Kellermann, G., & Craievich, A. F. (2002). Structure and melting of Bi nanocrystals embedded in a 'B IND.2''O IND.3-''Na IND.2'O glass. Physical Review B, 65( 13), 134204/1-134204/6. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000013134204000001&idtype=cvips
NLM
Kellermann G, Craievich AF. Structure and melting of Bi nanocrystals embedded in a 'B IND.2''O IND.3-''Na IND.2'O glass [Internet]. Physical Review B. 2002 ; 65( 13): 134204/1-134204/6.[citado 2024 set. 26 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000013134204000001&idtype=cvips
Vancouver
Kellermann G, Craievich AF. Structure and melting of Bi nanocrystals embedded in a 'B IND.2''O IND.3-''Na IND.2'O glass [Internet]. Physical Review B. 2002 ; 65( 13): 134204/1-134204/6.[citado 2024 set. 26 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000013134204000001&idtype=cvips
Artigo de periodico
Influence of interface mixing on the magnetic properties of Ni/Pt multilayers (2002)
Frota-Pessoa, S; Klautau, A. B.; Legoas, S B
Source: Physical Review B. Unidade: IF
Subjects: MATÉRIA CONDENSADA, MAGNETISMO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FROTA-PESSOA, S e KLAUTAU, A. B. e LEGOAS, S B. Influence of interface mixing on the magnetic properties of Ni/Pt multilayers. Physical Review B, v. 66, n. 13, p. 132416/1-132416/4, 2002Tradução . . Disponível em: https://doi.org/10.1103/physrevb.66.132416. Acesso em: 26 set. 2024.
APA
Frota-Pessoa, S., Klautau, A. B., & Legoas, S. B. (2002). Influence of interface mixing on the magnetic properties of Ni/Pt multilayers. Physical Review B, 66( 13), 132416/1-132416/4. doi:10.1103/physrevb.66.132416
NLM
Frota-Pessoa S, Klautau AB, Legoas SB. Influence of interface mixing on the magnetic properties of Ni/Pt multilayers [Internet]. Physical Review B. 2002 ; 66( 13): 132416/1-132416/4.[citado 2024 set. 26 ] Available from: https://doi.org/10.1103/physrevb.66.132416
Vancouver
Frota-Pessoa S, Klautau AB, Legoas SB. Influence of interface mixing on the magnetic properties of Ni/Pt multilayers [Internet]. Physical Review B. 2002 ; 66( 13): 132416/1-132416/4.[citado 2024 set. 26 ] Available from: https://doi.org/10.1103/physrevb.66.132416
Artigo de periodico
Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well (2002)
Cavalheiro, A; Silva, Euzi Conceicao Fernandes da; Takahashi, E K; Quivy, A. A.; Leite, J. R.; Meneses, E A
Source: Physical Review B. Unidade: IF
Subjects: EFEITO MOSSBAUER, FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CAVALHEIRO, A et al. Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well. Physical Review B, v. 65, n. 7, p. 75320/1-75320/7, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000007075320000001&idtype=cvips. Acesso em: 26 set. 2024.
APA
Cavalheiro, A., Silva, E. C. F. da, Takahashi, E. K., Quivy, A. A., Leite, J. R., & Meneses, E. A. (2002). Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well. Physical Review B, 65( 7), 75320/1-75320/7. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000007075320000001&idtype=cvips
NLM
Cavalheiro A, Silva ECF da, Takahashi EK, Quivy AA, Leite JR, Meneses EA. Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well [Internet]. Physical Review B. 2002 ; 65( 7): 75320/1-75320/7.[citado 2024 set. 26 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000007075320000001&idtype=cvips
Vancouver
Cavalheiro A, Silva ECF da, Takahashi EK, Quivy AA, Leite JR, Meneses EA. Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well [Internet]. Physical Review B. 2002 ; 65( 7): 75320/1-75320/7.[citado 2024 set. 26 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000007075320000001&idtype=cvips
Artigo de periodico
Self-consistent electronic structure of Mo(001) and W(001) surfaces (2000)
Legoas, S B; Araujo, A A; Laks, B; Klautau, A. B.; Frota-Pessoa, Sonia
Source: Physical Review B. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LEGOAS, S B et al. Self-consistent electronic structure of Mo(001) and W(001) surfaces. Physical Review B, v. 61, n. 15, p. 10417-10426, 2000Tradução . . Disponível em: https://doi.org/10.1103/physrevb.61.10417. Acesso em: 26 set. 2024.
APA
Legoas, S. B., Araujo, A. A., Laks, B., Klautau, A. B., & Frota-Pessoa, S. (2000). Self-consistent electronic structure of Mo(001) and W(001) surfaces. Physical Review B, 61( 15), 10417-10426. doi:10.1103/physrevb.61.10417
NLM
Legoas SB, Araujo AA, Laks B, Klautau AB, Frota-Pessoa S. Self-consistent electronic structure of Mo(001) and W(001) surfaces [Internet]. Physical Review B. 2000 ; 61( 15): 10417-10426.[citado 2024 set. 26 ] Available from: https://doi.org/10.1103/physrevb.61.10417
Vancouver
Legoas SB, Araujo AA, Laks B, Klautau AB, Frota-Pessoa S. Self-consistent electronic structure of Mo(001) and W(001) surfaces [Internet]. Physical Review B. 2000 ; 61( 15): 10417-10426.[citado 2024 set. 26 ] Available from: https://doi.org/10.1103/physrevb.61.10417
Artigo de periodico
Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers (2000)
Frizzarini, M; Silva, Euzi Conceicao Fernandes da; Quivy, A. A.; cavalheiro, A; Leite, J. R.; Meneses, E A
Source: Physical Review B. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FRIZZARINI, M et al. Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers. Physical Review B, v. 61, n. 20, p. 13923-13928, 2000Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000061000020013923000001&idtype=cvips. Acesso em: 26 set. 2024.
APA
Frizzarini, M., Silva, E. C. F. da, Quivy, A. A., cavalheiro, A., Leite, J. R., & Meneses, E. A. (2000). Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers. Physical Review B, 61( 20), 13923-13928. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000061000020013923000001&idtype=cvips
NLM
Frizzarini M, Silva ECF da, Quivy AA, cavalheiro A, Leite JR, Meneses EA. Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers [Internet]. Physical Review B. 2000 ; 61( 20): 13923-13928.[citado 2024 set. 26 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000061000020013923000001&idtype=cvips
Vancouver
Frizzarini M, Silva ECF da, Quivy AA, cavalheiro A, Leite JR, Meneses EA. Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers [Internet]. Physical Review B. 2000 ; 61( 20): 13923-13928.[citado 2024 set. 26 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000061000020013923000001&idtype=cvips
Artigo de periodico
Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers (1999)
Levine, A.; Silva, Euzi Conceicao Fernandes da; Sipahi, Guilherme Matos; Quivy, A. A.; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Dias, I. F. L.; Lauretto, E.; Oliveira, J. B. B.; Meneses, E. A.; Oliveira, A. G.
Source: Physical Review B. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LEVINE, A. et al. Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers. Physical Review B, v. 59, n. 7, p. 4634-4637, 1999Tradução . . Disponível em: https://doi.org/10.1103/physrevb.59.4634. Acesso em: 26 set. 2024.
APA
Levine, A., Silva, E. C. F. da, Sipahi, G. M., Quivy, A. A., Scolfaro, L. M. R., Leite, J. R., et al. (1999). Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers. Physical Review B, 59( 7), 4634-4637. doi:10.1103/physrevb.59.4634
NLM
Levine A, Silva ECF da, Sipahi GM, Quivy AA, Scolfaro LMR, Leite JR, Dias IFL, Lauretto E, Oliveira JBB, Meneses EA, Oliveira AG. Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers [Internet]. Physical Review B. 1999 ; 59( 7): 4634-4637.[citado 2024 set. 26 ] Available from: https://doi.org/10.1103/physrevb.59.4634
Vancouver
Levine A, Silva ECF da, Sipahi GM, Quivy AA, Scolfaro LMR, Leite JR, Dias IFL, Lauretto E, Oliveira JBB, Meneses EA, Oliveira AG. Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers [Internet]. Physical Review B. 1999 ; 59( 7): 4634-4637.[citado 2024 set. 26 ] Available from: https://doi.org/10.1103/physrevb.59.4634

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