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Artigo de periodico
Inter-Landau level transfer in valence band of In0.53Ga0.47As/InP quantum well (2022)
Patricio, Marco Antonio Tito; Teodoro, M. D.; Jacobsen, G. M.; LaPierre, R. R.; Pusep, Yuri A
Source: Physica E: low-dimensional systems and nanostructures. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS
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ABNT
PATRICIO, Marco Antonio Tito et al. Inter-Landau level transfer in valence band of In0.53Ga0.47As/InP quantum well. Physica E: low-dimensional systems and nanostructures, v. 143, p. 115347-1-115347-5, 2022Tradução . . Disponível em: https://doi.org/10.1016/j.physe.2022.115347. Acesso em: 17 nov. 2024.
APA
Patricio, M. A. T., Teodoro, M. D., Jacobsen, G. M., LaPierre, R. R., & Pusep, Y. A. (2022). Inter-Landau level transfer in valence band of In0.53Ga0.47As/InP quantum well. Physica E: low-dimensional systems and nanostructures, 143, 115347-1-115347-5. doi:10.1016/j.physe.2022.115347
NLM
Patricio MAT, Teodoro MD, Jacobsen GM, LaPierre RR, Pusep YA. Inter-Landau level transfer in valence band of In0.53Ga0.47As/InP quantum well [Internet]. Physica E: low-dimensional systems and nanostructures. 2022 ; 143 115347-1-115347-5.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/j.physe.2022.115347
Vancouver
Patricio MAT, Teodoro MD, Jacobsen GM, LaPierre RR, Pusep YA. Inter-Landau level transfer in valence band of In0.53Ga0.47As/InP quantum well [Internet]. Physica E: low-dimensional systems and nanostructures. 2022 ; 143 115347-1-115347-5.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/j.physe.2022.115347
Artigo de periodico
Spin relaxation of holes in In0.53Ga0.47As/InP quantum wells (2021)
Patricio, Marco Antonio Tito; Tavares, Belarmino Gomes Mendes; Jacobsen, J. M.; Teodoro, M. D.; LaPierre, R. R.; Pusep, Yuri A
Source: Physica E: low-dimensional systems and nanostructures. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PATRICIO, Marco Antonio Tito et al. Spin relaxation of holes in In0.53Ga0.47As/InP quantum wells. Physica E: low-dimensional systems and nanostructures, v. 131, p. 114700-1-114700-6, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.physe.2021.114700. Acesso em: 17 nov. 2024.
APA
Patricio, M. A. T., Tavares, B. G. M., Jacobsen, J. M., Teodoro, M. D., LaPierre, R. R., & Pusep, Y. A. (2021). Spin relaxation of holes in In0.53Ga0.47As/InP quantum wells. Physica E: low-dimensional systems and nanostructures, 131, 114700-1-114700-6. doi:10.1016/j.physe.2021.114700
NLM
Patricio MAT, Tavares BGM, Jacobsen JM, Teodoro MD, LaPierre RR, Pusep YA. Spin relaxation of holes in In0.53Ga0.47As/InP quantum wells [Internet]. Physica E: low-dimensional systems and nanostructures. 2021 ; 131 114700-1-114700-6.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/j.physe.2021.114700
Vancouver
Patricio MAT, Tavares BGM, Jacobsen JM, Teodoro MD, LaPierre RR, Pusep YA. Spin relaxation of holes in In0.53Ga0.47As/InP quantum wells [Internet]. Physica E: low-dimensional systems and nanostructures. 2021 ; 131 114700-1-114700-6.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/j.physe.2021.114700
Trabalho de evento-resumo
Recombination dynamics of Landau levels in an InGaAs/InP quantum well (2019)
Tavares, Belarmino; Pusep, Yuri A ; LaPierre, R. R.
Source: Book of abstracts. Conference titles: Semana Integrada do Instituto de Física de São Carlos - SIFSC. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TAVARES, Belarmino e PUSEP, Yuri A e LAPIERRE, R. R. Recombination dynamics of Landau levels in an InGaAs/InP quantum well. 2019, Anais.. São Carlos: Universidade de São Paulo - USP, Instituto de Física de São Carlos - IFSC, 2019. . Acesso em: 17 nov. 2024.
APA
Tavares, B., Pusep, Y. A., & LaPierre, R. R. (2019). Recombination dynamics of Landau levels in an InGaAs/InP quantum well. In Book of abstracts. São Carlos: Universidade de São Paulo - USP, Instituto de Física de São Carlos - IFSC.
NLM
Tavares B, Pusep YA, LaPierre RR. Recombination dynamics of Landau levels in an InGaAs/InP quantum well. Book of abstracts. 2019 ;[citado 2024 nov. 17 ]
Vancouver
Tavares B, Pusep YA, LaPierre RR. Recombination dynamics of Landau levels in an InGaAs/InP quantum well. Book of abstracts. 2019 ;[citado 2024 nov. 17 ]
Trabalho de evento-resumo
Recombination dynamics of Landau levels in an InGaAs/InP quantum well (2019)
Tavares, Belarmino Gomes Mendes; Teodoro, M. D.; Castro, E. D. Guarin; LaPierre, R. R.; Pusep, Yuri A
Source: Poster contributions. Conference titles: International Conference on Low Dimensional Structures and Devices - LDSD. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TAVARES, Belarmino Gomes Mendes et al. Recombination dynamics of Landau levels in an InGaAs/InP quantum well. 2019, Anais.. Bristol: Institute of Physics - IOP, 2019. Disponível em: http://www.ldsd2019.org/committees. Acesso em: 17 nov. 2024.
APA
Tavares, B. G. M., Teodoro, M. D., Castro, E. D. G., LaPierre, R. R., & Pusep, Y. A. (2019). Recombination dynamics of Landau levels in an InGaAs/InP quantum well. In Poster contributions. Bristol: Institute of Physics - IOP. Recuperado de http://www.ldsd2019.org/committees
NLM
Tavares BGM, Teodoro MD, Castro EDG, LaPierre RR, Pusep YA. Recombination dynamics of Landau levels in an InGaAs/InP quantum well [Internet]. Poster contributions. 2019 ;[citado 2024 nov. 17 ] Available from: http://www.ldsd2019.org/committees
Vancouver
Tavares BGM, Teodoro MD, Castro EDG, LaPierre RR, Pusep YA. Recombination dynamics of Landau levels in an InGaAs/InP quantum well [Internet]. Poster contributions. 2019 ;[citado 2024 nov. 17 ] Available from: http://www.ldsd2019.org/committees

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