Filtros : "IFSC031" "Kordesch, M. E." Removidos: "ADOLESCENTES" "ESALQ-LGN" "nu" Limpar

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  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: SILÍCIO, ALUMÍNIO, FILMES FINOS (COMPOSIÇÃO;ESTRUTURA;PROPRIEDADES)

    Acesso à fonteDOIHow to cite
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    • ABNT

      ZANATTA, Antonio Ricardo e KORDESCH, M. E. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon. Journal of Applied Physics, v. 116, n. 7, p. 073511-1-073511-7, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4893654. Acesso em: 04 nov. 2024.
    • APA

      Zanatta, A. R., & Kordesch, M. E. (2014). On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon. Journal of Applied Physics, 116( 7), 073511-1-073511-7. doi:10.1063/1.4893654
    • NLM

      Zanatta AR, Kordesch ME. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon [Internet]. Journal of Applied Physics. 2014 ; 116( 7): 073511-1-073511-7.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1063/1.4893654
    • Vancouver

      Zanatta AR, Kordesch ME. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon [Internet]. Journal of Applied Physics. 2014 ; 116( 7): 073511-1-073511-7.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1063/1.4893654
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: NÍQUEL, SEMICONDUTORES, DIFRAÇÃO POR RAIOS X, CRISTALIZAÇÃO, FILMES FINOS (COMPOSIÇÃO;ESTRUTURA;PROPRIEDADES)

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    • ABNT

      ZANATTA, Antonio Ricardo e INGRAM, D. C. e KORDESCH, M. E. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases. Journal of Applied Physics, v. 116, n. 12, p. 123508-1-123508-6, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4896589. Acesso em: 04 nov. 2024.
    • APA

      Zanatta, A. R., Ingram, D. C., & Kordesch, M. E. (2014). Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases. Journal of Applied Physics, 116( 12), 123508-1-123508-6. doi:10.1063/1.4896589
    • NLM

      Zanatta AR, Ingram DC, Kordesch ME. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases [Internet]. Journal of Applied Physics. 2014 ; 116( 12): 123508-1-123508-6.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1063/1.4896589
    • Vancouver

      Zanatta AR, Ingram DC, Kordesch ME. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases [Internet]. Journal of Applied Physics. 2014 ; 116( 12): 123508-1-123508-6.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1063/1.4896589
  • Source: Program. Conference titles: International Conference on the Structure of Non Crystalline Materials - NCM. Unidade: IFSC

    Subjects: CRISTALIZAÇÃO, FILMES FINOS, SILICIO

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    • ABNT

      ZANATTA, Antonio Ricardo e INGRAM, D. C. e KORDESCH, M. E. Influence of nickel concentration on the metal-induced crystallization of amorphous silicon thin films. 2013, Anais.. Trento: University of Trento, 2013. . Acesso em: 04 nov. 2024.
    • APA

      Zanatta, A. R., Ingram, D. C., & Kordesch, M. E. (2013). Influence of nickel concentration on the metal-induced crystallization of amorphous silicon thin films. In Program. Trento: University of Trento.
    • NLM

      Zanatta AR, Ingram DC, Kordesch ME. Influence of nickel concentration on the metal-induced crystallization of amorphous silicon thin films. Program. 2013 ;[citado 2024 nov. 04 ]
    • Vancouver

      Zanatta AR, Ingram DC, Kordesch ME. Influence of nickel concentration on the metal-induced crystallization of amorphous silicon thin films. Program. 2013 ;[citado 2024 nov. 04 ]
  • Source: Journal of Physics: Condensed Matter. Unidade: IFSC

    Subjects: ENERGIA, FILMES FINOS, SILICONE

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    • ABNT

      ZANATTA, Antonio Ricardo e KHAN, A. e KORDESCH, M. E. Red-green-blue light emission and energy transfer processes in amorphous SiN films doped with Sm and Tb. Journal of Physics: Condensed Matter, v. 19, n. 43, p. 436230-1-436230-8, 2007Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/19/43/436230. Acesso em: 04 nov. 2024.
    • APA

      Zanatta, A. R., Khan, A., & Kordesch, M. E. (2007). Red-green-blue light emission and energy transfer processes in amorphous SiN films doped with Sm and Tb. Journal of Physics: Condensed Matter, 19( 43), 436230-1-436230-8. doi:10.1088/0953-8984/19/43/436230
    • NLM

      Zanatta AR, Khan A, Kordesch ME. Red-green-blue light emission and energy transfer processes in amorphous SiN films doped with Sm and Tb [Internet]. Journal of Physics: Condensed Matter. 2007 ; 19( 43): 436230-1-436230-8.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1088/0953-8984/19/43/436230
    • Vancouver

      Zanatta AR, Khan A, Kordesch ME. Red-green-blue light emission and energy transfer processes in amorphous SiN films doped with Sm and Tb [Internet]. Journal of Physics: Condensed Matter. 2007 ; 19( 43): 436230-1-436230-8.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1088/0953-8984/19/43/436230

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