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Filtros : "Polônia" "IF-FAP" Removidos: "Harvard University (HU)" "1967" "Folha de São Paulo" "Roca" Limpar

Filtros

Artigo de periodico
Hybrid reciprocal lattice: application to layer stress determination in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates (2016)
Domagala, Jaroslaw Z.; Sarzynski, Marcin; Mazdziarz, Marcin; Dluzewski, Pawel; Leszczynski, Michal; Morelhao, Sergio Luiz
Source: Journal of Applied Crystallography. Unidade: IF
Subjects: SEMICONDUTORES, RAIOS X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DOMAGALA, Jaroslaw Z. et al. Hybrid reciprocal lattice: application to layer stress determination in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates. Journal of Applied Crystallography, v. 49, n. ju 2016, p. 798-805, 2016Tradução . . Disponível em: https://doi.org/10.1107/S1600576716004441. Acesso em: 18 nov. 2024.
APA
Domagala, J. Z., Sarzynski, M., Mazdziarz, M., Dluzewski, P., Leszczynski, M., & Morelhao, S. L. (2016). Hybrid reciprocal lattice: application to layer stress determination in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates. Journal of Applied Crystallography, 49( ju 2016), 798-805. doi:10.1107/S1600576716004441
NLM
Domagala JZ, Sarzynski M, Mazdziarz M, Dluzewski P, Leszczynski M, Morelhao SL. Hybrid reciprocal lattice: application to layer stress determination in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates [Internet]. Journal of Applied Crystallography. 2016 ; 49( ju 2016): 798-805.[citado 2024 nov. 18 ] Available from: https://doi.org/10.1107/S1600576716004441
Vancouver
Domagala JZ, Sarzynski M, Mazdziarz M, Dluzewski P, Leszczynski M, Morelhao SL. Hybrid reciprocal lattice: application to layer stress determination in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates [Internet]. Journal of Applied Crystallography. 2016 ; 49( ju 2016): 798-805.[citado 2024 nov. 18 ] Available from: https://doi.org/10.1107/S1600576716004441
Relatorio tecnico
Hybrid reciprocal lattice: application to layer stress appointment in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates (2016)
Domagala, Jaroslaw Z.; Sarzyński, Marcin; Maździarz, Marcin; Dlużewski, Pawel; Leszczyński, Michal; Morelhão, Sergio Luiz
Unidade: IF
Subjects: SEMICONDUTORES, RAIOS X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DOMAGALA, Jaroslaw Z. et al. Hybrid reciprocal lattice: application to layer stress appointment in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/ftp/arxiv/papers/1603/1603.00793.pdf. Acesso em: 18 nov. 2024. , 2016
APA
Domagala, J. Z., Sarzyński, M., Maździarz, M., Dlużewski, P., Leszczyński, M., & Morelhão, S. L. (2016). Hybrid reciprocal lattice: application to layer stress appointment in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/ftp/arxiv/papers/1603/1603.00793.pdf
NLM
Domagala JZ, Sarzyński M, Maździarz M, Dlużewski P, Leszczyński M, Morelhão SL. Hybrid reciprocal lattice: application to layer stress appointment in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates [Internet]. 2016 ;[citado 2024 nov. 18 ] Available from: https://arxiv.org/ftp/arxiv/papers/1603/1603.00793.pdf
Vancouver
Domagala JZ, Sarzyński M, Maździarz M, Dlużewski P, Leszczyński M, Morelhão SL. Hybrid reciprocal lattice: application to layer stress appointment in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates [Internet]. 2016 ;[citado 2024 nov. 18 ] Available from: https://arxiv.org/ftp/arxiv/papers/1603/1603.00793.pdf

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