Annealing crystallization of a-Ge/Al/Si thin films (2005)
Fonte: Physica Status Solidi B. Nome do evento: Latin American Symposium on Solid State Physics. Unidade: IFSC
Assuntos: FILMES FINOS, CRISTALIZAÇÃO
ABNT
FAJARDO, F. e ZANATTA, Antonio Ricardo e CHAMBOULEYRON, I. Annealing crystallization of a-Ge/Al/Si thin films. Physica Status Solidi B. Weinheim: Wiley-VCH Verlag GmbH. . Acesso em: 28 ago. 2024. , 2005APA
Fajardo, F., Zanatta, A. R., & Chambouleyron, I. (2005). Annealing crystallization of a-Ge/Al/Si thin films. Physica Status Solidi B. Weinheim: Wiley-VCH Verlag GmbH.NLM
Fajardo F, Zanatta AR, Chambouleyron I. Annealing crystallization of a-Ge/Al/Si thin films. Physica Status Solidi B. 2005 ; 242( 9): 1906-1909.[citado 2024 ago. 28 ]Vancouver
Fajardo F, Zanatta AR, Chambouleyron I. Annealing crystallization of a-Ge/Al/Si thin films. Physica Status Solidi B. 2005 ; 242( 9): 1906-1909.[citado 2024 ago. 28 ]