Filtros : "Indexado no INSPEC" "2000" Removidos: "Clínica Cirúrgica" "FFCLRP/USP" Limpar

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  • Source: Polymer. Unidade: IFSC

    Assunto: POLÍMEROS (QUÍMICA ORGÂNICA)

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      BATISTA, P. S. e SOUZA, Mílton Ferreira. Furfuryl alcohol conjugated oligomer pellicle formation. Polymer, v. 41, p. 8263-8269, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0032-3861(00)00178-6. Acesso em: 04 set. 2024.
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      Batista, P. S., & Souza, M. F. (2000). Furfuryl alcohol conjugated oligomer pellicle formation. Polymer, 41, 8263-8269. doi:10.1016/s0032-3861(00)00178-6
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      Batista PS, Souza MF. Furfuryl alcohol conjugated oligomer pellicle formation [Internet]. Polymer. 2000 ; 41 8263-8269.[citado 2024 set. 04 ] Available from: https://doi.org/10.1016/s0032-3861(00)00178-6
    • Vancouver

      Batista PS, Souza MF. Furfuryl alcohol conjugated oligomer pellicle formation [Internet]. Polymer. 2000 ; 41 8263-8269.[citado 2024 set. 04 ] Available from: https://doi.org/10.1016/s0032-3861(00)00178-6
  • Source: Stochastics and Stochastics Reports. Unidade: EP

    Assunto: PROCESSOS DE MARKOV

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      COSTA, Oswaldo Luiz do Valle e RAYMUNDO, A. B. Impulse and continuous control of peicewise deterministic Markov processes. Stochastics and Stochastics Reports, v. 70, p. 75-107, 2000Tradução . . Disponível em: https://doi.org/10.1080/17442500008834246. Acesso em: 04 set. 2024.
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      Costa, O. L. do V., & Raymundo, A. B. (2000). Impulse and continuous control of peicewise deterministic Markov processes. Stochastics and Stochastics Reports, 70, 75-107. doi:10.1080/17442500008834246
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      Costa OL do V, Raymundo AB. Impulse and continuous control of peicewise deterministic Markov processes [Internet]. Stochastics and Stochastics Reports. 2000 ; 70 75-107.[citado 2024 set. 04 ] Available from: https://doi.org/10.1080/17442500008834246
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      Costa OL do V, Raymundo AB. Impulse and continuous control of peicewise deterministic Markov processes [Internet]. Stochastics and Stochastics Reports. 2000 ; 70 75-107.[citado 2024 set. 04 ] Available from: https://doi.org/10.1080/17442500008834246
  • Source: Physica B. Unidade: EP

    Assunto: MAGNETISMO

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      DEL MORAL HERNANDEZ, Emilio e MURANAKA, Carlos S. e CARDOSO, José Roberto. Identification of the Jules-Atherton model parameters using random and deterministic searches. Physica B, v. 275, p. 212-215, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0921-4526(99)00766-8. Acesso em: 04 set. 2024.
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      Del Moral Hernandez, E., Muranaka, C. S., & Cardoso, J. R. (2000). Identification of the Jules-Atherton model parameters using random and deterministic searches. Physica B, 275, 212-215. doi:10.1016/s0921-4526(99)00766-8
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      Del Moral Hernandez E, Muranaka CS, Cardoso JR. Identification of the Jules-Atherton model parameters using random and deterministic searches [Internet]. Physica B. 2000 ; 275 212-215.[citado 2024 set. 04 ] Available from: https://doi.org/10.1016/s0921-4526(99)00766-8
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      Del Moral Hernandez E, Muranaka CS, Cardoso JR. Identification of the Jules-Atherton model parameters using random and deterministic searches [Internet]. Physica B. 2000 ; 275 212-215.[citado 2024 set. 04 ] Available from: https://doi.org/10.1016/s0921-4526(99)00766-8
  • Source: Electric Power Systems Research. Unidade: EP

    Assunto: CIRCUITOS ELETRÔNICOS

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      PINTO, Lucilius Carlos e ZANETTA JÚNIOR, Luiz Cera. Medium voltage SF6 circuit-break arc model application. Electric Power Systems Research, v. 53, p. 67-71, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0378-7796(99)00043-7. Acesso em: 04 set. 2024.
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      Pinto, L. C., & Zanetta Júnior, L. C. (2000). Medium voltage SF6 circuit-break arc model application. Electric Power Systems Research, 53, 67-71. doi:10.1016/s0378-7796(99)00043-7
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      Pinto LC, Zanetta Júnior LC. Medium voltage SF6 circuit-break arc model application [Internet]. Electric Power Systems Research. 2000 ; 53 67-71.[citado 2024 set. 04 ] Available from: https://doi.org/10.1016/s0378-7796(99)00043-7
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      Pinto LC, Zanetta Júnior LC. Medium voltage SF6 circuit-break arc model application [Internet]. Electric Power Systems Research. 2000 ; 53 67-71.[citado 2024 set. 04 ] Available from: https://doi.org/10.1016/s0378-7796(99)00043-7
  • Source: IEEE Transactions on Magnetics. Unidade: EP

    Subjects: MÁQUINAS ELÉTRICAS, MÉTODO DOS ELEMENTOS FINITOS

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      COSTA, Maurício Caldora e NABETA, Silvio Ikuyo e CARDOSO, José Roberto. Modified nodal analysis applied to electric circuits coupled with FEM in the simulation of a universal motor. IEEE Transactions on Magnetics, v. 36, n. 4, p. 1431-1434, 2000Tradução . . Disponível em: https://doi.org/10.1109/20.877707. Acesso em: 04 set. 2024.
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      Costa, M. C., Nabeta, S. I., & Cardoso, J. R. (2000). Modified nodal analysis applied to electric circuits coupled with FEM in the simulation of a universal motor. IEEE Transactions on Magnetics, 36( 4), 1431-1434. doi:10.1109/20.877707
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      Costa MC, Nabeta SI, Cardoso JR. Modified nodal analysis applied to electric circuits coupled with FEM in the simulation of a universal motor [Internet]. IEEE Transactions on Magnetics. 2000 ;36( 4): 1431-1434.[citado 2024 set. 04 ] Available from: https://doi.org/10.1109/20.877707
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      Costa MC, Nabeta SI, Cardoso JR. Modified nodal analysis applied to electric circuits coupled with FEM in the simulation of a universal motor [Internet]. IEEE Transactions on Magnetics. 2000 ;36( 4): 1431-1434.[citado 2024 set. 04 ] Available from: https://doi.org/10.1109/20.877707
  • Source: Polymer Engineering and Science. Unidade: EP

    Subjects: ALUMÍNIO, REVESTIMENTO DE SUPERFÍCIES

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      DEMARQUETTE, Nicole Raymonde et al. Surface tension of polyethylene used in thermal coating. Polymer Engineering and Science, v. 40, n. 7, p. 1663-1671, 2000Tradução . . Disponível em: https://doi.org/10.1002/pen.11298. Acesso em: 04 set. 2024.
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      Demarquette, N. R., Silva, F. T., Brandi, S. D., & Gouvêa, D. (2000). Surface tension of polyethylene used in thermal coating. Polymer Engineering and Science, 40( 7), 1663-1671. doi:10.1002/pen.11298
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      Demarquette NR, Silva FT, Brandi SD, Gouvêa D. Surface tension of polyethylene used in thermal coating [Internet]. Polymer Engineering and Science. 2000 ; 40( 7): 1663-1671.[citado 2024 set. 04 ] Available from: https://doi.org/10.1002/pen.11298
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      Demarquette NR, Silva FT, Brandi SD, Gouvêa D. Surface tension of polyethylene used in thermal coating [Internet]. Polymer Engineering and Science. 2000 ; 40( 7): 1663-1671.[citado 2024 set. 04 ] Available from: https://doi.org/10.1002/pen.11298
  • Source: Thin-Walled Structures. Unidade: EP

    Subjects: FADIGA DAS ESTRUTURAS, RESISTÊNCIA DOS MATERIAIS

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      BIRCH, R S e ALVES, Marcílio. Dynamic failure of structural joint systems. Thin-Walled Structures, v. 36, n. 2, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0263-8231(99)00040-3. Acesso em: 04 set. 2024.
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      Birch, R. S., & Alves, M. (2000). Dynamic failure of structural joint systems. Thin-Walled Structures, 36( 2). doi:10.1016/s0263-8231(99)00040-3
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      Birch RS, Alves M. Dynamic failure of structural joint systems [Internet]. Thin-Walled Structures. 2000 ; 36( 2):[citado 2024 set. 04 ] Available from: https://doi.org/10.1016/s0263-8231(99)00040-3
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      Birch RS, Alves M. Dynamic failure of structural joint systems [Internet]. Thin-Walled Structures. 2000 ; 36( 2):[citado 2024 set. 04 ] Available from: https://doi.org/10.1016/s0263-8231(99)00040-3
  • Source: IEEE Transactions on Magnetics. Conference titles: Simpósio Brasileiro de Computação Gráfica e Processamento de Imagens - SIBGRAPI 99. Unidade: EP

    Assunto: ELETROMAGNETISMO

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      SARTORI, Carlos Antonio França e CARDOSO, José Roberto. An analytical-FDTD method for near LEMP calculation. IEEE Transactions on Magnetics. New York: IEEE. . Acesso em: 04 set. 2024. , 2000
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      Sartori, C. A. F., & Cardoso, J. R. (2000). An analytical-FDTD method for near LEMP calculation. IEEE Transactions on Magnetics. New York: IEEE.
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      Sartori CAF, Cardoso JR. An analytical-FDTD method for near LEMP calculation. IEEE Transactions on Magnetics. 2000 ; 36( 4): 1631-1634.[citado 2024 set. 04 ]
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      Sartori CAF, Cardoso JR. An analytical-FDTD method for near LEMP calculation. IEEE Transactions on Magnetics. 2000 ; 36( 4): 1631-1634.[citado 2024 set. 04 ]
  • Source: International Journal of Imaging Systems and Technology. Unidade: EP

    Assunto: RECONHECIMENTO DE PADRÕES

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      HAE, Yong Kim. Binary operator design by k-nearest neighbor learning with application to image resolution increasing. International Journal of Imaging Systems and Technology, v. 11, n. 5, p. 331-339, 2000Tradução . . Disponível em: https://doi.org/10.1002/ima.1017. Acesso em: 04 set. 2024.
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      Hae, Y. K. (2000). Binary operator design by k-nearest neighbor learning with application to image resolution increasing. International Journal of Imaging Systems and Technology, 11( 5), 331-339. doi:10.1002/ima.1017
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      Hae YK. Binary operator design by k-nearest neighbor learning with application to image resolution increasing [Internet]. International Journal of Imaging Systems and Technology. 2000 ; 11( 5): 331-339.[citado 2024 set. 04 ] Available from: https://doi.org/10.1002/ima.1017
    • Vancouver

      Hae YK. Binary operator design by k-nearest neighbor learning with application to image resolution increasing [Internet]. International Journal of Imaging Systems and Technology. 2000 ; 11( 5): 331-339.[citado 2024 set. 04 ] Available from: https://doi.org/10.1002/ima.1017
  • Source: Solid-State Electronics. Unidade: EP

    Assunto: CIRCUITOS INTEGRADOS

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      NICOLETT, Aparecido Sirley et al. Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs. Solid-State Electronics, v. No 2000, n. 11, p. 1961-1969, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(00)00166-0. Acesso em: 04 set. 2024.
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      Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2000). Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs. Solid-State Electronics, No 2000( 11), 1961-1969. doi:10.1016/s0038-1101(00)00166-0
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      Nicolett AS, Martino JA, Simoen E, Claeys C. Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs [Internet]. Solid-State Electronics. 2000 ; No 2000( 11): 1961-1969.[citado 2024 set. 04 ] Available from: https://doi.org/10.1016/s0038-1101(00)00166-0
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      Nicolett AS, Martino JA, Simoen E, Claeys C. Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs [Internet]. Solid-State Electronics. 2000 ; No 2000( 11): 1961-1969.[citado 2024 set. 04 ] Available from: https://doi.org/10.1016/s0038-1101(00)00166-0
  • Source: International Journal of Control. Unidade: EP

    Assunto: CONTROLE (TEORIA DE SISTEMAS E CONTROLE)

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      COSTA, Oswaldo Luiz do Valle e MARQUES, Ricardo Paulino. Robust H2 - control for discrete time Markovian jump linear systems. International Journal of Control, v. 73, n. 1, p. 11-21. 2000, 2000Tradução . . Disponível em: https://doi.org/10.1080/002071700219894. Acesso em: 04 set. 2024.
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      Costa, O. L. do V., & Marques, R. P. (2000). Robust H2 - control for discrete time Markovian jump linear systems. International Journal of Control, 73( 1), 11-21. 2000. doi:10.1080/002071700219894
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      Costa OL do V, Marques RP. Robust H2 - control for discrete time Markovian jump linear systems [Internet]. International Journal of Control. 2000 ; 73( 1): 11-21. 2000.[citado 2024 set. 04 ] Available from: https://doi.org/10.1080/002071700219894
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      Costa OL do V, Marques RP. Robust H2 - control for discrete time Markovian jump linear systems [Internet]. International Journal of Control. 2000 ; 73( 1): 11-21. 2000.[citado 2024 set. 04 ] Available from: https://doi.org/10.1080/002071700219894
  • Source: Computers & Structures. Unidade: EP

    Subjects: MECÂNICA DA FRATURA, MECÂNICA DAS ESTRUTURAS

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      ALVES, Marcílio e YU, Jilin e JONES, Norman. On the elastic modulus degradation in continuum damage mechanics. Computers & Structures, v. 76, n. 6, p. 703-712, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0045-7949(99)00187-x. Acesso em: 04 set. 2024.
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      Alves, M., Yu, J., & Jones, N. (2000). On the elastic modulus degradation in continuum damage mechanics. Computers & Structures, 76( 6), 703-712. doi:10.1016/s0045-7949(99)00187-x
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      Alves M, Yu J, Jones N. On the elastic modulus degradation in continuum damage mechanics [Internet]. Computers & Structures. 2000 ; 76( 6): 703-712.[citado 2024 set. 04 ] Available from: https://doi.org/10.1016/s0045-7949(99)00187-x
    • Vancouver

      Alves M, Yu J, Jones N. On the elastic modulus degradation in continuum damage mechanics [Internet]. Computers & Structures. 2000 ; 76( 6): 703-712.[citado 2024 set. 04 ] Available from: https://doi.org/10.1016/s0045-7949(99)00187-x
  • Source: Solid-State Electronics. Unidade: EP

    Assunto: CIRCUITOS INTEGRADOS

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      PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e FLANDRE, Denis. Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects. Solid-State Electronics, v. 44, n. 6, p. 917-922, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(00)00032-0. Acesso em: 04 set. 2024.
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      Pavanello, M. A., Martino, J. A., & Flandre, D. (2000). Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects. Solid-State Electronics, 44( 6), 917-922. doi:10.1016/s0038-1101(00)00032-0
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      Pavanello MA, Martino JA, Flandre D. Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects [Internet]. Solid-State Electronics. 2000 ; 44( 6): 917-922.[citado 2024 set. 04 ] Available from: https://doi.org/10.1016/s0038-1101(00)00032-0
    • Vancouver

      Pavanello MA, Martino JA, Flandre D. Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects [Internet]. Solid-State Electronics. 2000 ; 44( 6): 917-922.[citado 2024 set. 04 ] Available from: https://doi.org/10.1016/s0038-1101(00)00032-0
  • Source: Advanced Materials for Optics and Electronics. Unidade: IFSC

    Assunto: MATÉRIA CONDENSADA

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      LEITE, E R et al. Amorphous lead titanate: a new wide-band gap semiconductor with photoluminescence at room temperature. Advanced Materials for Optics and Electronics, v. 10, p. 235-240, 2000Tradução . . Disponível em: https://doi.org/10.1002/1099-0712(200011/12)10:6%3C235::aid-amo409%3E3.0.co;2-6. Acesso em: 04 set. 2024.
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      Leite, E. R., Pontes, F. M., Paris, E. C., Paskocimas, C. A., Lee, E. J. H., Longo, E., et al. (2000). Amorphous lead titanate: a new wide-band gap semiconductor with photoluminescence at room temperature. Advanced Materials for Optics and Electronics, 10, 235-240. doi:10.1002/1099-0712(200011/12)10:6%3C235::aid-amo409%3E3.0.co;2-6
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      Leite ER, Pontes FM, Paris EC, Paskocimas CA, Lee EJH, Longo E, Pizani PS, Varella JA, Mastelaro VR. Amorphous lead titanate: a new wide-band gap semiconductor with photoluminescence at room temperature [Internet]. Advanced Materials for Optics and Electronics. 2000 ;10 235-240.[citado 2024 set. 04 ] Available from: https://doi.org/10.1002/1099-0712(200011/12)10:6%3C235::aid-amo409%3E3.0.co;2-6
    • Vancouver

      Leite ER, Pontes FM, Paris EC, Paskocimas CA, Lee EJH, Longo E, Pizani PS, Varella JA, Mastelaro VR. Amorphous lead titanate: a new wide-band gap semiconductor with photoluminescence at room temperature [Internet]. Advanced Materials for Optics and Electronics. 2000 ;10 235-240.[citado 2024 set. 04 ] Available from: https://doi.org/10.1002/1099-0712(200011/12)10:6%3C235::aid-amo409%3E3.0.co;2-6
  • Source: Brazilian Journal of Physics. Unidade: IFSC

    Assunto: RELATIVIDADE E GRAVITACAO

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      ACCIOLY, A et al. Fierz-Pauli higher derivative gravity. Brazilian Journal of Physics, v. 30, n. 3, p. 544-553, 2000Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332000000300011. Acesso em: 04 set. 2024.
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      Accioly, A., Ragusa, S., Mukai, H., & Neto, E. D. (2000). Fierz-Pauli higher derivative gravity. Brazilian Journal of Physics, 30( 3), 544-553. doi:10.1590/s0103-97332000000300011
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      Accioly A, Ragusa S, Mukai H, Neto ED. Fierz-Pauli higher derivative gravity [Internet]. Brazilian Journal of Physics. 2000 ; 30( 3): 544-553.[citado 2024 set. 04 ] Available from: https://doi.org/10.1590/s0103-97332000000300011
    • Vancouver

      Accioly A, Ragusa S, Mukai H, Neto ED. Fierz-Pauli higher derivative gravity [Internet]. Brazilian Journal of Physics. 2000 ; 30( 3): 544-553.[citado 2024 set. 04 ] Available from: https://doi.org/10.1590/s0103-97332000000300011
  • Source: Microelectronics and Realiability. Unidade: EP

    Assunto: CIRCUITOS ELETRÔNICOS

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      SILVA, Ana Neilde Rodrigues da e MORIMOTO, Nilton Itiro e BONNAUD, Olivier. Tetraethylorthosilicate SiO2 films deposited at a low temperature. Microelectronics and Realiability, v. 40, p. 621-624, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0026-2714(99)00296-6. Acesso em: 04 set. 2024.
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      Silva, A. N. R. da, Morimoto, N. I., & Bonnaud, O. (2000). Tetraethylorthosilicate SiO2 films deposited at a low temperature. Microelectronics and Realiability, 40, 621-624. doi:10.1016/s0026-2714(99)00296-6
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      Silva ANR da, Morimoto NI, Bonnaud O. Tetraethylorthosilicate SiO2 films deposited at a low temperature [Internet]. Microelectronics and Realiability. 2000 ; 40 621-624.[citado 2024 set. 04 ] Available from: https://doi.org/10.1016/s0026-2714(99)00296-6
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      Silva ANR da, Morimoto NI, Bonnaud O. Tetraethylorthosilicate SiO2 films deposited at a low temperature [Internet]. Microelectronics and Realiability. 2000 ; 40 621-624.[citado 2024 set. 04 ] Available from: https://doi.org/10.1016/s0026-2714(99)00296-6
  • Source: Electrochemical and Solid-State Letters. Unidade: EP

    Assunto: CIRCUITOS INTEGRADOS MOS

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      PAVANELLO, Marcelo Antonio et al. An asymmetric channel SOI nMOSFET for reducing parasitic effects and improving output characteristics. Electrochemical and Solid-State Letters, v. 3, n. Ja 2000, p. 50-52, 2000Tradução . . Disponível em: https://doi.org/10.1149/1.1390955. Acesso em: 04 set. 2024.
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      Pavanello, M. A., Martino, J. A., Dessard, V., & Flandre, D. (2000). An asymmetric channel SOI nMOSFET for reducing parasitic effects and improving output characteristics. Electrochemical and Solid-State Letters, 3( Ja 2000), 50-52. doi:10.1149/1.1390955
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      Pavanello MA, Martino JA, Dessard V, Flandre D. An asymmetric channel SOI nMOSFET for reducing parasitic effects and improving output characteristics [Internet]. Electrochemical and Solid-State Letters. 2000 ; 3( Ja 2000): 50-52.[citado 2024 set. 04 ] Available from: https://doi.org/10.1149/1.1390955
    • Vancouver

      Pavanello MA, Martino JA, Dessard V, Flandre D. An asymmetric channel SOI nMOSFET for reducing parasitic effects and improving output characteristics [Internet]. Electrochemical and Solid-State Letters. 2000 ; 3( Ja 2000): 50-52.[citado 2024 set. 04 ] Available from: https://doi.org/10.1149/1.1390955
  • Source: IEEE Transactions on Industry Applications. Unidade: EP

    Assunto: ENGENHARIA ELÉTRICA

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      SIERRA, Jorge A. e KAISER, Walter. Comparison of fluorescent lamp stabilization methods in the current-fed push-pull inverter. IEEE Transactions on Industry Applications, v. 36, p. 105-110, 2000Tradução . . Disponível em: https://doi.org/10.1109/ias.1998.729966. Acesso em: 04 set. 2024.
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      Sierra, J. A., & Kaiser, W. (2000). Comparison of fluorescent lamp stabilization methods in the current-fed push-pull inverter. IEEE Transactions on Industry Applications, 36, 105-110. doi:10.1109/ias.1998.729966
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      Sierra JA, Kaiser W. Comparison of fluorescent lamp stabilization methods in the current-fed push-pull inverter [Internet]. IEEE Transactions on Industry Applications. 2000 ; 36 105-110.[citado 2024 set. 04 ] Available from: https://doi.org/10.1109/ias.1998.729966
    • Vancouver

      Sierra JA, Kaiser W. Comparison of fluorescent lamp stabilization methods in the current-fed push-pull inverter [Internet]. IEEE Transactions on Industry Applications. 2000 ; 36 105-110.[citado 2024 set. 04 ] Available from: https://doi.org/10.1109/ias.1998.729966
  • Source: Advanced Materials for Optics and Electronics. Unidade: IFSC

    Subjects: MATÉRIA CONDENSADA, DIELÉTRICOS

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      RIBEIRO, C. T. M. et al. Effects of isolastic oxygen pressure on the crystal growth and optical properties of undoped and 'Er POT.3+'-doped 'Ca IND.3''(V'O IND.4') IND.2' single-crystal fibres. Advanced Materials for Optics and Electronics, v. 10, p. 9-15, 2000Tradução . . Disponível em: https://doi.org/10.1002/1099-0712(200001/02)10:1*3C9::AID-AMO393*3E3.0.CO;2-Y. Acesso em: 04 set. 2024.
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      Ribeiro, C. T. M., Reyes Ardila, D., Andreeta, J. P., & Siu Li, M. (2000). Effects of isolastic oxygen pressure on the crystal growth and optical properties of undoped and 'Er POT.3+'-doped 'Ca IND.3''(V'O IND.4') IND.2' single-crystal fibres. Advanced Materials for Optics and Electronics, 10, 9-15. doi:10.1002/1099-0712(200001/02)10:1%3C9::AID-AMO393%3E3.0.CO;2-Y
    • NLM

      Ribeiro CTM, Reyes Ardila D, Andreeta JP, Siu Li M. Effects of isolastic oxygen pressure on the crystal growth and optical properties of undoped and 'Er POT.3+'-doped 'Ca IND.3''(V'O IND.4') IND.2' single-crystal fibres [Internet]. Advanced Materials for Optics and Electronics. 2000 ; 10 9-15.[citado 2024 set. 04 ] Available from: https://doi.org/10.1002/1099-0712(200001/02)10:1*3C9::AID-AMO393*3E3.0.CO;2-Y
    • Vancouver

      Ribeiro CTM, Reyes Ardila D, Andreeta JP, Siu Li M. Effects of isolastic oxygen pressure on the crystal growth and optical properties of undoped and 'Er POT.3+'-doped 'Ca IND.3''(V'O IND.4') IND.2' single-crystal fibres [Internet]. Advanced Materials for Optics and Electronics. 2000 ; 10 9-15.[citado 2024 set. 04 ] Available from: https://doi.org/10.1002/1099-0712(200001/02)10:1*3C9::AID-AMO393*3E3.0.CO;2-Y
  • Source: Real-Time Imaging. Unidade: IFSC

    Subjects: INSTRUMENTAÇÃO (FÍSICA), SIMULAÇÃO, COMPUTAÇÃO APLICADA

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      COSTA, Luciano da Fontoura. Robust skeletonization through exact Euclidean distance transform and its application to neuromorphometry. Real-Time Imaging, v. 6, p. 415-431, 2000Tradução . . Acesso em: 04 set. 2024.
    • APA

      Costa, L. da F. (2000). Robust skeletonization through exact Euclidean distance transform and its application to neuromorphometry. Real-Time Imaging, 6, 415-431.
    • NLM

      Costa L da F. Robust skeletonization through exact Euclidean distance transform and its application to neuromorphometry. Real-Time Imaging. 2000 ;6 415-431.[citado 2024 set. 04 ]
    • Vancouver

      Costa L da F. Robust skeletonization through exact Euclidean distance transform and its application to neuromorphometry. Real-Time Imaging. 2000 ;6 415-431.[citado 2024 set. 04 ]

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