ReP USP - Resultado da busca

Artigo de periodico
Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel (2024)
Pusep, Yuri A ; Teodoro, Marcio Daldin ; Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Gusev, Gennady ; Bakarov, Askhat
Source: Physical Review B. Unidades: IFSC, IF
Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES, CAMPO MAGNÉTICO, FÍSICA MODERNA
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ABNT
PUSEP, Yuri A et al. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel. Physical Review B, v. 109, n. 7, p. 075429-1-075429-6, 2024Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.109.075429. Acesso em: 16 nov. 2024.
APA
Pusep, Y. A., Teodoro, M. D., Patricio, M. A. T., Jacobsen, G. M., Gusev, G., & Bakarov, A. (2024). Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel. Physical Review B, 109( 7), 075429-1-075429-6. doi:10.1103/PhysRevB.109.075429
NLM
Pusep YA, Teodoro MD, Patricio MAT, Jacobsen GM, Gusev G, Bakarov A. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel [Internet]. Physical Review B. 2024 ; 109( 7): 075429-1-075429-6.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevB.109.075429
Vancouver
Pusep YA, Teodoro MD, Patricio MAT, Jacobsen GM, Gusev G, Bakarov A. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel [Internet]. Physical Review B. 2024 ; 109( 7): 075429-1-075429-6.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevB.109.075429
Artigo de periodico
Magnetic field effects on the valence band of AlGaAs and InGaAsP parabolic quantum wells (2023)
Patricio, Marco Antonio Tito ; Villegas-Lelovsky, Leonardo ; Oliveira, Edson Rafael Cardozo de ; Marques, ‪Gilmar Eugenio; LaPierre, Ray ; Toropov, Alexander I.; Pusep, Yuri A
Source: Physical Review B. Unidade: IFSC
Subjects: SPIN, POÇOS QUÂNTICOS, CAMPO ELETROMAGNÉTICO
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ABNT
PATRICIO, Marco Antonio Tito et al. Magnetic field effects on the valence band of AlGaAs and InGaAsP parabolic quantum wells. Physical Review B, v. 108, n. 3, p. 035416-1-035416-9, 2023Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.108.035416. Acesso em: 16 nov. 2024.
APA
Patricio, M. A. T., Villegas-Lelovsky, L., Oliveira, E. R. C. de, Marques, ‪G. E., LaPierre, R., Toropov, A. I., & Pusep, Y. A. (2023). Magnetic field effects on the valence band of AlGaAs and InGaAsP parabolic quantum wells. Physical Review B, 108( 3), 035416-1-035416-9. doi:10.1103/PhysRevB.108.035416
NLM
Patricio MAT, Villegas-Lelovsky L, Oliveira ERC de, Marques ‪GE, LaPierre R, Toropov AI, Pusep YA. Magnetic field effects on the valence band of AlGaAs and InGaAsP parabolic quantum wells [Internet]. Physical Review B. 2023 ; 108( 3): 035416-1-035416-9.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevB.108.035416
Vancouver
Patricio MAT, Villegas-Lelovsky L, Oliveira ERC de, Marques ‪GE, LaPierre R, Toropov AI, Pusep YA. Magnetic field effects on the valence band of AlGaAs and InGaAsP parabolic quantum wells [Internet]. Physical Review B. 2023 ; 108( 3): 035416-1-035416-9.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevB.108.035416
Artigo de periodico
Diffusion of photoexcited holes in a viscous electron fluid (2022)
Pusep, Yuri A ; Teodoro, M. D. ; Laurindo Junior, V. ; Oliveira, E. R. Cardozo ; Gusev, Gennady ; Bakarov, A. K.
Source: Physical Review Letters. Unidades: IFSC, IF
Subjects: POÇOS QUÂNTICOS, MATERIAIS NANOESTRUTURADOS, FOTOLUMINESCÊNCIA
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ABNT
PUSEP, Yuri A et al. Diffusion of photoexcited holes in a viscous electron fluid. Physical Review Letters, v. 128, n. 13, p. 136801-1-136801-6, 2022Tradução . . Disponível em: https://doi.org/10.1103/PhysRevLett.128.136801. Acesso em: 16 nov. 2024.
APA
Pusep, Y. A., Teodoro, M. D., Laurindo Junior, V., Oliveira, E. R. C., Gusev, G., & Bakarov, A. K. (2022). Diffusion of photoexcited holes in a viscous electron fluid. Physical Review Letters, 128( 13), 136801-1-136801-6. doi:10.1103/PhysRevLett.128.136801
NLM
Pusep YA, Teodoro MD, Laurindo Junior V, Oliveira ERC, Gusev G, Bakarov AK. Diffusion of photoexcited holes in a viscous electron fluid [Internet]. Physical Review Letters. 2022 ; 128( 13): 136801-1-136801-6.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevLett.128.136801
Vancouver
Pusep YA, Teodoro MD, Laurindo Junior V, Oliveira ERC, Gusev G, Bakarov AK. Diffusion of photoexcited holes in a viscous electron fluid [Internet]. Physical Review Letters. 2022 ; 128( 13): 136801-1-136801-6.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevLett.128.136801
Artigo de periodico
Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well (2019)
Patricio, M. A. Tito; LaPierre, R. R.; Pusep, Yuri A
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
PATRICIO, M. A. Tito e LAPIERRE, R. R. e PUSEP, Yuri A. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, v. 125, n. 15, p. 155703-01-155703-06, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5085493. Acesso em: 16 nov. 2024.
APA
Patricio, M. A. T., LaPierre, R. R., & Pusep, Y. A. (2019). Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, 125( 15), 155703-01-155703-06. doi:10.1063/1.5085493
NLM
Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1063/1.5085493
Vancouver
Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1063/1.5085493
Artigo de periodico
Localized-to-extended-states transition below the Fermi level (2018)
Tito, M. A.; Pusep, Yuri A
Source: Physical Review B. Unidade: IFSC
Subjects: POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA
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ABNT
TITO, M. A. e PUSEP, Yuri A. Localized-to-extended-states transition below the Fermi level. Physical Review B, v. 97, n. 18, p. 184203-1-184203-6, 2018Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.97.184203. Acesso em: 16 nov. 2024.
APA
Tito, M. A., & Pusep, Y. A. (2018). Localized-to-extended-states transition below the Fermi level. Physical Review B, 97( 18), 184203-1-184203-6. doi:10.1103/PhysRevB.97.184203
NLM
Tito MA, Pusep YA. Localized-to-extended-states transition below the Fermi level [Internet]. Physical Review B. 2018 ; 97( 18): 184203-1-184203-6.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevB.97.184203
Vancouver
Tito MA, Pusep YA. Localized-to-extended-states transition below the Fermi level [Internet]. Physical Review B. 2018 ; 97( 18): 184203-1-184203-6.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevB.97.184203
Artigo de periodico
Recombination dynamics of Landau levels in an InGaAs/InP quantum well (2018)
Teodoro, M. D.; Tavares, B. G. M.; Castro, E. D. Guarin; LaPierre, R. R.; Pusep, Yuri A
Source: Physical Review B. Unidade: IFSC
Subjects: POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA
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ABNT
TEODORO, M. D. et al. Recombination dynamics of Landau levels in an InGaAs/InP quantum well. Physical Review B, v. 98, n. 15, p. 155431-1-155431-7, 2018Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.98.155431. Acesso em: 16 nov. 2024.
APA
Teodoro, M. D., Tavares, B. G. M., Castro, E. D. G., LaPierre, R. R., & Pusep, Y. A. (2018). Recombination dynamics of Landau levels in an InGaAs/InP quantum well. Physical Review B, 98( 15), 155431-1-155431-7. doi:10.1103/PhysRevB.98.155431
NLM
Teodoro MD, Tavares BGM, Castro EDG, LaPierre RR, Pusep YA. Recombination dynamics of Landau levels in an InGaAs/InP quantum well [Internet]. Physical Review B. 2018 ; 98( 15): 155431-1-155431-7.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevB.98.155431
Vancouver
Teodoro MD, Tavares BGM, Castro EDG, LaPierre RR, Pusep YA. Recombination dynamics of Landau levels in an InGaAs/InP quantum well [Internet]. Physical Review B. 2018 ; 98( 15): 155431-1-155431-7.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevB.98.155431
Trabalho de evento-resumo
Inter-valley Auger recombination in InGaAs/InP quantum wells (2017)
Tito, M. A.; Pusep, Yuri A ; Gold, A.; Teodoro, M. D.; Marques, G. E.; LaPierre, R. R.
Source: Program. Conference titles: International Conference on the Electronic Properties of Two-Dimensional Systems - EP2DS. Unidade: IFSC
Subjects: ELÉTRONS (SISTEMAS), FOTOLUMINESCÊNCIA, CAMPO MAGNÉTICO, POÇOS QUÂNTICOS
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ABNT
TITO, M. A. et al. Inter-valley Auger recombination in InGaAs/InP quantum wells. 2017, Anais.. State College: Pennsylvania State University, 2017. Disponível em: https://sites.psu.edu/ep2ds2017/programs. Acesso em: 16 nov. 2024.
APA
Tito, M. A., Pusep, Y. A., Gold, A., Teodoro, M. D., Marques, G. E., & LaPierre, R. R. (2017). Inter-valley Auger recombination in InGaAs/InP quantum wells. In Program. State College: Pennsylvania State University. Recuperado de https://sites.psu.edu/ep2ds2017/programs
NLM
Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Inter-valley Auger recombination in InGaAs/InP quantum wells [Internet]. Program. 2017 ;[citado 2024 nov. 16 ] Available from: https://sites.psu.edu/ep2ds2017/programs
Vancouver
Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Inter-valley Auger recombination in InGaAs/InP quantum wells [Internet]. Program. 2017 ;[citado 2024 nov. 16 ] Available from: https://sites.psu.edu/ep2ds2017/programs
Editor de periodico
The Scientific World Journal: condensed matter physics (2017)
Adhikari, Sadhan (Editor); Pusep, Yuri A (Editor)
Unidade: IFSC
Assunto: FÍSICA DA MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
The Scientific World Journal: condensed matter physics. . New York: Hindawi. . Acesso em: 16 nov. 2024. , 2017
APA
The Scientific World Journal: condensed matter physics. (2017). The Scientific World Journal: condensed matter physics. New York: Hindawi.
NLM
The Scientific World Journal: condensed matter physics. 2017 ;[citado 2024 nov. 16 ]
Vancouver
The Scientific World Journal: condensed matter physics. 2017 ;[citado 2024 nov. 16 ]
Artigo de periodico
Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells (2016)
Tito, M. A.; Pusep, Yuri A ; Gold, A.; Teodoro, M. D.; Marques, G. E.; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
TITO, M. A. et al. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, v. 119, n. 9, p. 094301-1-094301-8, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4942854. Acesso em: 16 nov. 2024.
APA
Tito, M. A., Pusep, Y. A., Gold, A., Teodoro, M. D., Marques, G. E., & LaPierre, R. R. (2016). Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, 119( 9), 094301-1-094301-8. doi:10.1063/1.4942854
NLM
Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1063/1.4942854
Vancouver
Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1063/1.4942854
Editor de periodico
The Scientific World Journal: condensed matter physics (2016)
Adhikari, Sadhan (Editor); Pusep, Yuri A (Editor)
Unidade: IFSC
Assunto: FÍSICA DA MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
The Scientific World Journal: condensed matter physics. . New York: Hindawi. . Acesso em: 16 nov. 2024. , 2016
APA
The Scientific World Journal: condensed matter physics. (2016). The Scientific World Journal: condensed matter physics. New York: Hindawi.
NLM
The Scientific World Journal: condensed matter physics. 2016 ;[citado 2024 nov. 16 ]
Vancouver
The Scientific World Journal: condensed matter physics. 2016 ;[citado 2024 nov. 16 ]
Artigo de periodico
Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers (2016)
Tavares, B. G. M.; Tito, M. A.; Pusep, Yuri A
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TAVARES, B. G. M. e TITO, M. A. e PUSEP, Yuri A. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers. Journal of Applied Physics, v. 119, n. 23, p. 234305-1-234305-4, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4954161. Acesso em: 16 nov. 2024.
APA
Tavares, B. G. M., Tito, M. A., & Pusep, Y. A. (2016). Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers. Journal of Applied Physics, 119( 23), 234305-1-234305-4. doi:10.1063/1.4954161
NLM
Tavares BGM, Tito MA, Pusep YA. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2016 ; 119( 23): 234305-1-234305-4.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1063/1.4954161
Vancouver
Tavares BGM, Tito MA, Pusep YA. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2016 ; 119( 23): 234305-1-234305-4.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1063/1.4954161
Trabalho de evento-resumo
Hybrid heterostructured semiconductor nanowires and conjugated polymer with potential application in photovoltaic devices (2016)
Caface, Raphael; Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo
Source: Abstracts. Conference titles: Materials Research Society Fall Meeting and Exhibit. Unidade: IFSC
Subjects: SEMICONDUTORES, POLÍMEROS (MATERIAIS), MATERIAIS NANOESTRUTURADOS
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ABNT
CAFACE, Raphael e PUSEP, Yuri A e GUIMARÃES, Francisco Eduardo Gontijo. Hybrid heterostructured semiconductor nanowires and conjugated polymer with potential application in photovoltaic devices. 2016, Anais.. Warrendale: Materials Research Society - MRS, 2016. Disponível em: https://www.mrs.org/technical-programs/programs_abstracts/2016_mrs_fall_meeting_exhibit/nm1/nm1_13_3/nm1_13_18_17. Acesso em: 16 nov. 2024.
APA
Caface, R., Pusep, Y. A., & Guimarães, F. E. G. (2016). Hybrid heterostructured semiconductor nanowires and conjugated polymer with potential application in photovoltaic devices. In Abstracts. Warrendale: Materials Research Society - MRS. Recuperado de https://www.mrs.org/technical-programs/programs_abstracts/2016_mrs_fall_meeting_exhibit/nm1/nm1_13_3/nm1_13_18_17
NLM
Caface R, Pusep YA, Guimarães FEG. Hybrid heterostructured semiconductor nanowires and conjugated polymer with potential application in photovoltaic devices [Internet]. Abstracts. 2016 ;[citado 2024 nov. 16 ] Available from: https://www.mrs.org/technical-programs/programs_abstracts/2016_mrs_fall_meeting_exhibit/nm1/nm1_13_3/nm1_13_18_17
Vancouver
Caface R, Pusep YA, Guimarães FEG. Hybrid heterostructured semiconductor nanowires and conjugated polymer with potential application in photovoltaic devices [Internet]. Abstracts. 2016 ;[citado 2024 nov. 16 ] Available from: https://www.mrs.org/technical-programs/programs_abstracts/2016_mrs_fall_meeting_exhibit/nm1/nm1_13_3/nm1_13_18_17
Editor de periodico
The Scientific World Journal: condensed matter physics (2015)
Adhikari, Sadhan (Editor); Pusep, Yuri A (Editor)
Unidade: IFSC
Assunto: FÍSICA DA MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
The Scientific World Journal: condensed matter physics. . New York: Hindawi. . Acesso em: 16 nov. 2024. , 2015
APA
The Scientific World Journal: condensed matter physics. (2015). The Scientific World Journal: condensed matter physics. New York: Hindawi.
NLM
The Scientific World Journal: condensed matter physics. 2015 ;[citado 2024 nov. 16 ]
Vancouver
The Scientific World Journal: condensed matter physics. 2015 ;[citado 2024 nov. 16 ]
Artigo de periodico
Self-assembly of SiO2 nanoparticles for the potentiometric detection of neurotransmitter acetylcholine and its inhibitor (2014)
Arruda, Izabela G.; Guimarães, Francisco Eduardo Gontijo ; Ramos, Romildo J.; Vieira, Nirton C. S.
Source: Journal of Nanoscience and Nanotechnology. Unidade: IFSC
Subjects: NANOPARTÍCULAS, NEUROTRANSMISSORES, ACETILCOLINA
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ABNT
ARRUDA, Izabela G. et al. Self-assembly of SiO2 nanoparticles for the potentiometric detection of neurotransmitter acetylcholine and its inhibitor. Journal of Nanoscience and Nanotechnology, v. 14, n. 9, p. 6658-6661, 2014Tradução . . Disponível em: https://doi.org/10.1166/jnn.2014.9351. Acesso em: 16 nov. 2024.
APA
Arruda, I. G., Guimarães, F. E. G., Ramos, R. J., & Vieira, N. C. S. (2014). Self-assembly of SiO2 nanoparticles for the potentiometric detection of neurotransmitter acetylcholine and its inhibitor. Journal of Nanoscience and Nanotechnology, 14( 9), 6658-6661. doi:10.1166/jnn.2014.9351
NLM
Arruda IG, Guimarães FEG, Ramos RJ, Vieira NCS. Self-assembly of SiO2 nanoparticles for the potentiometric detection of neurotransmitter acetylcholine and its inhibitor [Internet]. Journal of Nanoscience and Nanotechnology. 2014 ; 14( 9): 6658-6661.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1166/jnn.2014.9351
Vancouver
Arruda IG, Guimarães FEG, Ramos RJ, Vieira NCS. Self-assembly of SiO2 nanoparticles for the potentiometric detection of neurotransmitter acetylcholine and its inhibitor [Internet]. Journal of Nanoscience and Nanotechnology. 2014 ; 14( 9): 6658-6661.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1166/jnn.2014.9351
Artigo de periodico
Spectroscopic evidence of quantum Hall interlayer tunneling gap collapse caused by tilted magnetic field in a GaAs/AlGaAs triple quantum well (2014)
Santos, L. Fernandes dos; Barbosa, B. G.; Gusev, Guennadii Michailovich ; Ludwig, J.; Smirnov, D.; Bakarov, A. K.; Pusep, Yuri A
Source: Physical Review B. Unidades: IF, IFSC
Subjects: POÇOS QUÂNTICOS, CAMPO MAGNÉTICO
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ABNT
SANTOS, L. Fernandes dos et al. Spectroscopic evidence of quantum Hall interlayer tunneling gap collapse caused by tilted magnetic field in a GaAs/AlGaAs triple quantum well. Physical Review B, v. 89, n. 19, p. 195113-1-195113-5, 2014Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.89.195113. Acesso em: 16 nov. 2024.
APA
Santos, L. F. dos, Barbosa, B. G., Gusev, G. M., Ludwig, J., Smirnov, D., Bakarov, A. K., & Pusep, Y. A. (2014). Spectroscopic evidence of quantum Hall interlayer tunneling gap collapse caused by tilted magnetic field in a GaAs/AlGaAs triple quantum well. Physical Review B, 89( 19), 195113-1-195113-5. doi:10.1103/PhysRevB.89.195113
NLM
Santos LF dos, Barbosa BG, Gusev GM, Ludwig J, Smirnov D, Bakarov AK, Pusep YA. Spectroscopic evidence of quantum Hall interlayer tunneling gap collapse caused by tilted magnetic field in a GaAs/AlGaAs triple quantum well [Internet]. Physical Review B. 2014 ; 89( 19): 195113-1-195113-5.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevB.89.195113
Vancouver
Santos LF dos, Barbosa BG, Gusev GM, Ludwig J, Smirnov D, Bakarov AK, Pusep YA. Spectroscopic evidence of quantum Hall interlayer tunneling gap collapse caused by tilted magnetic field in a GaAs/AlGaAs triple quantum well [Internet]. Physical Review B. 2014 ; 89( 19): 195113-1-195113-5.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevB.89.195113
Editor de periodico
The Scientific World Journal: condensed matter physics (2014)
Adhikari, Sadhan (Editor); Pusep, Yuri A (Editor)
Unidade: IFSC
Assunto: FÍSICA DA MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
The Scientific World Journal: condensed matter physics. . New York: Hindawi. . Acesso em: 16 nov. 2024. , 2014
APA
The Scientific World Journal: condensed matter physics. (2014). The Scientific World Journal: condensed matter physics. New York: Hindawi.
NLM
The Scientific World Journal: condensed matter physics. 2014 ;[citado 2024 nov. 16 ]
Vancouver
The Scientific World Journal: condensed matter physics. 2014 ;[citado 2024 nov. 16 ]
Artigo de periodico
Grazing angle photoluminescence of porous alumina as an analytical transducer for gaseous ethanol detection (2014)
Guerreiro, Haroldo A.; Strixino, Francisco Trivinho; Chiquito, Adenilson J.; Guimarães, Francisco Eduardo Gontijo ; Pereira, Ernesto C.
Source: Journal of Nanoscience and Nanotechnology. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, SEMICONDUTORES, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUERREIRO, Haroldo A. et al. Grazing angle photoluminescence of porous alumina as an analytical transducer for gaseous ethanol detection. Journal of Nanoscience and Nanotechnology, v. 14, n. 9, p. 6653-6657, 2014Tradução . . Disponível em: https://doi.org/10.1166/jnn.2014.9375. Acesso em: 16 nov. 2024.
APA
Guerreiro, H. A., Strixino, F. T., Chiquito, A. J., Guimarães, F. E. G., & Pereira, E. C. (2014). Grazing angle photoluminescence of porous alumina as an analytical transducer for gaseous ethanol detection. Journal of Nanoscience and Nanotechnology, 14( 9), 6653-6657. doi:10.1166/jnn.2014.9375
NLM
Guerreiro HA, Strixino FT, Chiquito AJ, Guimarães FEG, Pereira EC. Grazing angle photoluminescence of porous alumina as an analytical transducer for gaseous ethanol detection [Internet]. Journal of Nanoscience and Nanotechnology. 2014 ; 14( 9): 6653-6657.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1166/jnn.2014.9375
Vancouver
Guerreiro HA, Strixino FT, Chiquito AJ, Guimarães FEG, Pereira EC. Grazing angle photoluminescence of porous alumina as an analytical transducer for gaseous ethanol detection [Internet]. Journal of Nanoscience and Nanotechnology. 2014 ; 14( 9): 6653-6657.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1166/jnn.2014.9375
Artigo de periodico
Layer-by-layer films containing SiO2 nanoparticles as field-effect pH sensors (2013)
Arruda, Izabela G.; Vieira, Nirton C. S.; Pereira, Rodrigo; Chagas, Edson Ferreira; Guimarães, Francisco Eduardo Gontijo ; Ramos, Romildo J.
Source: Sensor Letters. Unidade: IFSC
Subjects: FILMES FINOS, SENSOR (APLICAÇÕES), NANOPARTÍCULAS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ARRUDA, Izabela G. et al. Layer-by-layer films containing SiO2 nanoparticles as field-effect pH sensors. Sensor Letters, v. 11, n. 2, p. 348-351, 2013Tradução . . Disponível em: https://doi.org/10.1166/sl.2013.2729. Acesso em: 16 nov. 2024.
APA
Arruda, I. G., Vieira, N. C. S., Pereira, R., Chagas, E. F., Guimarães, F. E. G., & Ramos, R. J. (2013). Layer-by-layer films containing SiO2 nanoparticles as field-effect pH sensors. Sensor Letters, 11( 2), 348-351. doi:10.1166/sl.2013.2729
NLM
Arruda IG, Vieira NCS, Pereira R, Chagas EF, Guimarães FEG, Ramos RJ. Layer-by-layer films containing SiO2 nanoparticles as field-effect pH sensors [Internet]. Sensor Letters. 2013 ; 11( 2): 348-351.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1166/sl.2013.2729
Vancouver
Arruda IG, Vieira NCS, Pereira R, Chagas EF, Guimarães FEG, Ramos RJ. Layer-by-layer films containing SiO2 nanoparticles as field-effect pH sensors [Internet]. Sensor Letters. 2013 ; 11( 2): 348-351.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1166/sl.2013.2729
Artigo de periodico
Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires (2013)
Guimarães, Francisco Eduardo Gontijo ; Caface, R. A.; Arakaki, Haroldo; Souza, Carlos Alberto de; Pusep, Yuri A
Source: Applied Physics Letters. Unidade: IFSC
Subjects: NANOTECNOLOGIA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUIMARÃES, Francisco Eduardo Gontijo et al. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires. Applied Physics Letters, v. 103, n. 3, p. 033121-1-033121-3, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4816288. Acesso em: 16 nov. 2024.
APA
Guimarães, F. E. G., Caface, R. A., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2013). Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires. Applied Physics Letters, 103( 3), 033121-1-033121-3. doi:10.1063/1.4816288
NLM
Guimarães FEG, Caface RA, Arakaki H, Souza CA de, Pusep YA. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Applied Physics Letters. 2013 ; 103( 3): 033121-1-033121-3.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1063/1.4816288
Vancouver
Guimarães FEG, Caface RA, Arakaki H, Souza CA de, Pusep YA. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Applied Physics Letters. 2013 ; 103( 3): 033121-1-033121-3.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1063/1.4816288
Artigo de periodico
Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires (2013)
Pusep, Yuri A ; Arakaki, Haroldo; Souza, Carlos Alberto de; Rodrigues, A. D.; Haapamaki, C. M.; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A et al. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, v. 113, n. 16, p. 164311-1-164311-4, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4803494. Acesso em: 16 nov. 2024.
APA
Pusep, Y. A., Arakaki, H., Souza, C. A. de, Rodrigues, A. D., Haapamaki, C. M., & LaPierre, R. R. (2013). Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, 113( 16), 164311-1-164311-4. doi:10.1063/1.4803494
NLM
Pusep YA, Arakaki H, Souza CA de, Rodrigues AD, Haapamaki CM, LaPierre RR. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 16): 164311-1-164311-4.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1063/1.4803494
Vancouver
Pusep YA, Arakaki H, Souza CA de, Rodrigues AD, Haapamaki CM, LaPierre RR. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 16): 164311-1-164311-4.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1063/1.4803494

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