Microfluidic electronic tongues based on high-entropy nitride films (2025)
- Authors:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- DOI: 10.1021/acsaelm.5c00489
- Subjects: FILMES FINOS; SENSOR; POLÍMEROS (MATERIAIS)
- Keywords: High-entropy nitrides; E-tongue device; Advanced sensors; Thin film; Sputtering
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Publisher place: Washington, DC
- Date published: 2025
- Source:
- Título: ACS Applied Electronic Materials
- ISSN: 2637-6113
- Volume/Número/Paginação/Ano: v. 7, n. 12, p. 5537-5548 + supporting information, June 2025
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: hybrid
- Licença: cc-by
-
ABNT
LEIDENS, Leonardo Mathias et al. Microfluidic electronic tongues based on high-entropy nitride films. ACS Applied Electronic Materials, v. 7, n. 12, p. 5537-5548 + supporting information, 2025Tradução . . Disponível em: https://doi.org/10.1021/acsaelm.5c00489. Acesso em: 26 dez. 2025. -
APA
Leidens, L. M., Boeira, C. D., Souza, M. H. G. de, Costa, E. E. C., Marchi, M. C., Zanatta, A. R., & Riul Junior, A. (2025). Microfluidic electronic tongues based on high-entropy nitride films. ACS Applied Electronic Materials, 7( 12), 5537-5548 + supporting information. doi:10.1021/acsaelm.5c00489 -
NLM
Leidens LM, Boeira CD, Souza MHG de, Costa EEC, Marchi MC, Zanatta AR, Riul Junior A. Microfluidic electronic tongues based on high-entropy nitride films [Internet]. ACS Applied Electronic Materials. 2025 ; 7( 12): 5537-5548 + supporting information.[citado 2025 dez. 26 ] Available from: https://doi.org/10.1021/acsaelm.5c00489 -
Vancouver
Leidens LM, Boeira CD, Souza MHG de, Costa EEC, Marchi MC, Zanatta AR, Riul Junior A. Microfluidic electronic tongues based on high-entropy nitride films [Internet]. ACS Applied Electronic Materials. 2025 ; 7( 12): 5537-5548 + supporting information.[citado 2025 dez. 26 ] Available from: https://doi.org/10.1021/acsaelm.5c00489 - Influence of the substrate on the growth of Co3O4 films deposited by reactive DC magnetron sputtering
- Exponential absorption edge and disorder in Column IV amorphous semiconductors
- Laser interference structuring of a-Ge films on GaAs
- Neutral dangling bond depletion in amorphous SiN films induced by magnetic rare-earth elements
- Photoluminescence of a-GeN alloys doped with different rare-earth ions
- X-ray photoelectron spectroscopy of amorphous A1N alloys prepared by reactive rf sputtering
- Photoluminescence of a-GeN alloys doped with different rare-earth ions
- Comprehensive spectroscopic study of nitrogenated carbon nanotubes
- Formation of silicon nanocrystals in Si'O IND.2' by oxireduction reaction indeced by impurity implantation and annealing
- Estudo das propriedades ópticas-estruturais de compostos à base de 'AL'-'GA'-'AS'
Informações sobre o DOI: 10.1021/acsaelm.5c00489 (Fonte: oaDOI API)
Download do texto completo
| Tipo | Nome | Link | |
|---|---|---|---|
| 3255728.pdf | Direct link |
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
