Assessment of Ionizing Radiation Hardness of a GaN Field-Effect Transistor (2020)
- Authors:
- Autor USP: MEDINA, NILBERTO HEDER - IF
- Unidade: IF
- DOI: 10.1109/SBMicro.2019.8919340
- Assunto: RADIAÇÃO IONIZANTE
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Publisher: Institute of Electrical and Electronics Engineers
- Publisher place: Piscataway, Nova Jersey, USA
- Date published: 2020
- Conference titles: Symposium on Microelectronics Technology and Devices (SBMicro)
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
BÔAS, Alexis Cristiano Vilas et al. Assessment of Ionizing Radiation Hardness of a GaN Field-Effect Transistor. 2020, Anais.. Piscataway, Nova Jersey, USA: Institute of Electrical and Electronics Engineers, 2020. Disponível em: https://doi.org/10.1109/SBMicro.2019.8919340. Acesso em: 09 jan. 2026. -
APA
Bôas, A. C. V., Melo, M. A. A. de, Santos, R. B. B., Giacomini, R. C., Medina, N. H., Seixas, L. E., et al. (2020). Assessment of Ionizing Radiation Hardness of a GaN Field-Effect Transistor. In . Piscataway, Nova Jersey, USA: Institute of Electrical and Electronics Engineers. doi:10.1109/SBMicro.2019.8919340 -
NLM
Bôas ACV, Melo MAA de, Santos RBB, Giacomini RC, Medina NH, Seixas LE, Palomo FR, Guazzelli MA. Assessment of Ionizing Radiation Hardness of a GaN Field-Effect Transistor [Internet]. 2020 ;[citado 2026 jan. 09 ] Available from: https://doi.org/10.1109/SBMicro.2019.8919340 -
Vancouver
Bôas ACV, Melo MAA de, Santos RBB, Giacomini RC, Medina NH, Seixas LE, Palomo FR, Guazzelli MA. Assessment of Ionizing Radiation Hardness of a GaN Field-Effect Transistor [Internet]. 2020 ;[citado 2026 jan. 09 ] Available from: https://doi.org/10.1109/SBMicro.2019.8919340 - New generation of High Electron Mobility Transistors (HEMT) tolerant to radiation effects
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Informações sobre o DOI: 10.1109/SBMicro.2019.8919340 (Fonte: oaDOI API)
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