Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments (2022)
- Authors:
- Autor USP: MEDINA, NILBERTO HEDER - IF
- Unidade: IF
- DOI: 10.1109/RADECS47380.2019.9745697
- Subjects: FÍSICA NUCLEAR; RADIAÇÃO IONIZANTE; ELETRÔNICA QUÂNTICA; NANOTECNOLOGIA
- Keywords: TID; Radiation effects; GaN; HEMT
- Language: Inglês
- Imprenta:
- Conference titles: European Conference on Radiation and its Effects on Components and Systems (RADECS)
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
VILAS BÔAS, Alexis C et al. Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments. 2022, Anais.. New York: IEEE, 2022. Disponível em: https://doi.org/10.1109/RADECS47380.2019.9745697. Acesso em: 24 fev. 2026. -
APA
Vilas Bôas, A. C., Melo, M. A. A. de, Santos, R. B. B., Giacomini, R., Medina, N. H., Seixas, L. E., et al. (2022). Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments. In . New York: IEEE. doi:10.1109/RADECS47380.2019.9745697 -
NLM
Vilas Bôas AC, Melo MAA de, Santos RBB, Giacomini R, Medina NH, Seixas LE, Finco S, Palomo FR, Romero-Maestre A, Guazzelli MA. Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments [Internet]. 2022 ;[citado 2026 fev. 24 ] Available from: https://doi.org/10.1109/RADECS47380.2019.9745697 -
Vancouver
Vilas Bôas AC, Melo MAA de, Santos RBB, Giacomini R, Medina NH, Seixas LE, Finco S, Palomo FR, Romero-Maestre A, Guazzelli MA. Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments [Internet]. 2022 ;[citado 2026 fev. 24 ] Available from: https://doi.org/10.1109/RADECS47380.2019.9745697 - New generation of High Electron Mobility Transistors (HEMT) tolerant to radiation effects
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Informações sobre o DOI: 10.1109/RADECS47380.2019.9745697 (Fonte: oaDOI API)
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