Electric field induced topological phase transition in two-dimensional few-layer black phosphorus (2014)
- Authors:
- Autor USP: FAZZIO, ADALBERTO - IF
- Unidade: IF
- Subjects: TERMOELETRICIDADE; MATERIAIS NANOESTRUTURADOS
- Language: Inglês
- Imprenta:
-
ABNT
LIU, Qihang; ZHANG, Xiuwen; ZUNGER, Alex; ABDALLA, Leonardo Batoni; FAZZIO, Adalberto. Electric field induced topological phase transition in two-dimensional few-layer black phosphorus. [S.l: s.n.], 2014. -
APA
Liu, Q., Zhang, X., Zunger, A., Abdalla, L. B., & Fazzio, A. (2014). Electric field induced topological phase transition in two-dimensional few-layer black phosphorus. São Paulo. -
NLM
Liu Q, Zhang X, Zunger A, Abdalla LB, Fazzio A. Electric field induced topological phase transition in two-dimensional few-layer black phosphorus. 2014 ; -
Vancouver
Liu Q, Zhang X, Zunger A, Abdalla LB, Fazzio A. Electric field induced topological phase transition in two-dimensional few-layer black phosphorus. 2014 ; - Progress in the study of transition metal impurities in iii-v and ii-vi materials
- Metais de transicao no intersticio de materiais iii-v
- Impurezas intersticiais de metal de transicao em 'GA''AS'
- Analise de auto-interacao de zunger e perdew
- Transicao metal-semicondutor em hidreto de cesio
- Charge stabilization of cr at interstitial sites in gaas
- Spin-polaron pairing and the x dependence of the 'T IND.C''IN'' ('la ind.1-x''sr ind.X') IND.2''CU''O IND.4'
- Hardness and softness no estudo de aglomerados moleculares de 'GA''AS'
- Structural and electronic properties of si doped GaAs with stacking fault
- Ab initio study of n impurity in amorphous germanium
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