Electric field induced topological phase transition in two-dimensional few-layer black phosphorus (2014)
- Autores:
- Autor USP: FAZZIO, ADALBERTO - IF
- Unidade: IF
- Assuntos: TERMOELETRICIDADE; MATERIAIS NANOESTRUTURADOS
- Idioma: Inglês
- Imprenta:
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ABNT
LIU, Qihang et al. Electric field induced topological phase transition in two-dimensional few-layer black phosphorus. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: http://arxiv.org/ftp/arxiv/papers/1411/1411.3932.pdf. Acesso em: 19 mar. 2024. , 2014 -
APA
Liu, Q., Zhang, X., Zunger, A., Abdalla, L. B., & Fazzio, A. (2014). Electric field induced topological phase transition in two-dimensional few-layer black phosphorus. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de http://arxiv.org/ftp/arxiv/papers/1411/1411.3932.pdf -
NLM
Liu Q, Zhang X, Zunger A, Abdalla LB, Fazzio A. Electric field induced topological phase transition in two-dimensional few-layer black phosphorus [Internet]. 2014 ;[citado 2024 mar. 19 ] Available from: http://arxiv.org/ftp/arxiv/papers/1411/1411.3932.pdf -
Vancouver
Liu Q, Zhang X, Zunger A, Abdalla LB, Fazzio A. Electric field induced topological phase transition in two-dimensional few-layer black phosphorus [Internet]. 2014 ;[citado 2024 mar. 19 ] Available from: http://arxiv.org/ftp/arxiv/papers/1411/1411.3932.pdf - Spectral distribution of photoionization cross section of 'FE POT.2+' in inp: 'FE'
- Terras raras em gap
- Estrutura eletronica e geometrica dos clusters de 'GA IND.N' 'AS IND.M' (n,m = 1-3)
- Estrutura eletronica da microestrutura: 'GA IND.N' 'AS IND.M'
- Role played by n and n-n impurities in type-'IV' semiconductors
- Theoretical investigation of the optical spectra of superconducting 'YBA IND.2''CU IND.3''O IND.7'
- Electronic structure of periodically 'SI'-'GAMA'-doped'GA''AS'
- Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan
- Optical transitions in ruby across the corundum to 'Rh IND.2''O IND.3' (II) phase transformation
- Gap e 'GA''AS' dopados com 'V POT.2+': baixo spin x alto spin
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