Topological states ruled by stacking faults in 'BI' IND. 2''SE' IND. 3' and 'BI' IND. 2''TE' IND. 3' (2013)
- Authors:
- USP affiliated authors: FAZZIO, ADALBERTO - IF ; ROCHA, LEANDRO SEIXAS - IF ; ABDALLA, LEONARDO BATONI - IF
- Unidade: IF
- DOI: 10.1063/1.4773325
- Assunto: TOPOLOGIA
- Language: Inglês
- Imprenta:
- Source:
- Título: JOURNAL OF APPLIED PHYSICS
- Volume/Número/Paginação/Ano: v. 113, n. 2, p. 023705, jan.2013
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
SEIXAS, L. et al. Topological states ruled by stacking faults in 'BI' IND. 2''SE' IND. 3' and 'BI' IND. 2''TE' IND. 3'. JOURNAL OF APPLIED PHYSICS, v. 113, n. ja2013, p. 023705, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4773325. Acesso em: 26 jan. 2026. -
APA
Seixas, L., Abdalla, L. B., Schmidt, T. M., Miwa, R. H., & Fazzio, A. (2013). Topological states ruled by stacking faults in 'BI' IND. 2''SE' IND. 3' and 'BI' IND. 2''TE' IND. 3'. JOURNAL OF APPLIED PHYSICS, 113( ja2013), 023705. doi:10.1063/1.4773325 -
NLM
Seixas L, Abdalla LB, Schmidt TM, Miwa RH, Fazzio A. Topological states ruled by stacking faults in 'BI' IND. 2''SE' IND. 3' and 'BI' IND. 2''TE' IND. 3' [Internet]. JOURNAL OF APPLIED PHYSICS. 2013 ; 113( ja2013): 023705.[citado 2026 jan. 26 ] Available from: https://doi.org/10.1063/1.4773325 -
Vancouver
Seixas L, Abdalla LB, Schmidt TM, Miwa RH, Fazzio A. Topological states ruled by stacking faults in 'BI' IND. 2''SE' IND. 3' and 'BI' IND. 2''TE' IND. 3' [Internet]. JOURNAL OF APPLIED PHYSICS. 2013 ; 113( ja2013): 023705.[citado 2026 jan. 26 ] Available from: https://doi.org/10.1063/1.4773325 - Topological phase transitions of '('BI' IND. x''SB' IND. 1−x') IND. 2''SE' IND. 3' alloys by density functional theory
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- Quantum spin Hall effect on germanene nanorod embedded in completely hydrogenated germanene
- Estrutura eletrônica de isolantes topológicos em duas e três dimensões
- Propriedades eletrônicas dos isolantes topológicos
- Quantum spin hall effect in a disordered hexagonal 'SI' IND. x''GE' IND. 1−x' alloy
- Characteristic temperature of 2D materials
- Theoretical study of "NH IND.3" sensors based on "CN IND.x" nanotubes
- Interaction of As impurities with 30'GRAUS' partial dislocations in Si: an ab initio investigation
- Stacking fault effects in pure and n-type doped GaAs
Informações sobre o DOI: 10.1063/1.4773325 (Fonte: oaDOI API)
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