Study of isolated native defects and hydrogen impurities in tin dioxide (2011)
- Authors:
- Autor USP: ASSALI, LUCY VITORIA CREDIDIO - IF
- Unidade: IF
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: UFJF
- Publisher place: Juiz de Fora
- Date published: 2011
- Source:
- Título do periódico: Resumo
- Conference titles: Brazilian Workshop on Semiconductor Physics
-
ABNT
BORGES, Pablo Damasceno et al. Study of isolated native defects and hydrogen impurities in tin dioxide. 2011, Anais.. Juiz de Fora: UFJF, 2011. . Acesso em: 27 mar. 2023. -
APA
Borges, P. D., L. M. R. Scolfaro, L. M. R., Alves, H. W. L., & Assali, L. V. C. (2011). Study of isolated native defects and hydrogen impurities in tin dioxide. In Resumo. Juiz de Fora: UFJF. -
NLM
Borges PD, L. M. R. Scolfaro LMR, Alves HWL, Assali LVC. Study of isolated native defects and hydrogen impurities in tin dioxide. Resumo. 2011 ;[citado 2023 mar. 27 ] -
Vancouver
Borges PD, L. M. R. Scolfaro LMR, Alves HWL, Assali LVC. Study of isolated native defects and hydrogen impurities in tin dioxide. Resumo. 2011 ;[citado 2023 mar. 27 ] - Study of magnetic and electronic properties of 'SN' IND. 0,96''CR' IND. 0,04''O IND. 2' and 'SN' IND. 0,96''CR' IND. 0,04''O IND. 0,98''('V IND. O')IND. 0,02' diluted alloys
- Structural and electronic properties of hydrogen impurities in MgO
- A general procedure for accurate defect excitation energies from DFT-1/2 band structures: the case of 'NV POT. -' center in diamond
- Propriedades físicas de impurezas profundas em silício
- Electronic structure of erbium centers in silicon
- Electrically active centers in partial dislocations in semiconductors
- Complex centers of hydrogen in tin dioxide
- General procedure for the calculation of accurate defect excitation energies from DFT-1/2 band structures: the case of the NV − center in diamond
- Laboratório virtual: simulação teórica de materiais
- 3rd transition metals in diamond: electronic properties and chemical trends
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
