Study of isolated native defects and hydrogen impurities in tin dioxide (2011)
- Authors:
- Autor USP: ASSALI, LUCY VITORIA CREDIDIO - IF
- Unidade: IF
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: UFJF
- Publisher place: Juiz de Fora
- Date published: 2011
- Source:
- Título: Resumo
- Conference titles: Brazilian Workshop on Semiconductor Physics
-
ABNT
BORGES, Pablo Damasceno et al. Study of isolated native defects and hydrogen impurities in tin dioxide. 2011, Anais.. Juiz de Fora: UFJF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0061-2.pdf. Acesso em: 03 nov. 2024. -
APA
Borges, P. D., L. M. R. Scolfaro, L. M. R., Alves, H. W. L., & Assali, L. V. C. (2011). Study of isolated native defects and hydrogen impurities in tin dioxide. In Resumo. Juiz de Fora: UFJF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0061-2.pdf -
NLM
Borges PD, L. M. R. Scolfaro LMR, Alves HWL, Assali LVC. Study of isolated native defects and hydrogen impurities in tin dioxide [Internet]. Resumo. 2011 ;[citado 2024 nov. 03 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0061-2.pdf -
Vancouver
Borges PD, L. M. R. Scolfaro LMR, Alves HWL, Assali LVC. Study of isolated native defects and hydrogen impurities in tin dioxide [Internet]. Resumo. 2011 ;[citado 2024 nov. 03 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0061-2.pdf - Electronic structure of erbium centers in silicon
- Propriedades físicas de impurezas profundas em silício
- Electrically active centers in partial dislocations in semiconductors
- Study of magnetic and electronic properties of 'SN' IND. 0,96''CR' IND. 0,04''O IND. 2' and 'SN' IND. 0,96''CR' IND. 0,04''O IND. 0,98''('V IND. O')IND. 0,02' diluted alloys
- Structural and electronic properties of hydrogen impurities in MgO
- A general procedure for accurate defect excitation energies from DFT-1/2 band structures: the case of 'NV POT. -' center in diamond
- General procedure for the calculation of accurate defect excitation energies from DFT-1/2 band structures: the case of the NV − center in diamond
- Complex centers of hydrogen in tin dioxide
- Estados eletronicos de complexos envolvendo cobre e litio em germanio
- Calculos da estrutura eletronica de defeitos complexos em 'GA''AS' e em outros cristais semicondutores com carater ionico
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
