3rd transition metals in diamond: electronic properties and chemical trends (2010)
- Autor:
- Autor USP: ASSALI, LUCY VITORIA CREDIDIO - IF
- Unidade: IF
- Assunto: FÍSICA DA MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Conference titles: European Conference on Silicon Carbide and Related Materials
-
ABNT
ASSALI, L. V. C. 3rd transition metals in diamond: electronic properties and chemical trends. 2010, Anais.. Norway: Instituto de Física, Universidade de São Paulo, 2010. Disponível em: http://www.ecscrm10.com/index.php. Acesso em: 27 mar. 2023. -
APA
Assali, L. V. C. (2010). 3rd transition metals in diamond: electronic properties and chemical trends. In . Norway: Instituto de Física, Universidade de São Paulo. Recuperado de http://www.ecscrm10.com/index.php -
NLM
Assali LVC. 3rd transition metals in diamond: electronic properties and chemical trends [Internet]. 2010 ;[citado 2023 mar. 27 ] Available from: http://www.ecscrm10.com/index.php -
Vancouver
Assali LVC. 3rd transition metals in diamond: electronic properties and chemical trends [Internet]. 2010 ;[citado 2023 mar. 27 ] Available from: http://www.ecscrm10.com/index.php - Study of magnetic and electronic properties of 'SN' IND. 0,96''CR' IND. 0,04''O IND. 2' and 'SN' IND. 0,96''CR' IND. 0,04''O IND. 0,98''('V IND. O')IND. 0,02' diluted alloys
- Structural and electronic properties of hydrogen impurities in MgO
- A general procedure for accurate defect excitation energies from DFT-1/2 band structures: the case of 'NV POT. -' center in diamond
- Propriedades físicas de impurezas profundas em silício
- Electronic structure of erbium centers in silicon
- Electrically active centers in partial dislocations in semiconductors
- Complex centers of hydrogen in tin dioxide
- General procedure for the calculation of accurate defect excitation energies from DFT-1/2 band structures: the case of the NV − center in diamond
- Laboratório virtual: simulação teórica de materiais
- Study of isolated native defects and hydrogen impurities in tin dioxide
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