Chemical bonding and composition of silicon nitride films prepared by inductively coupled plasma chemical vapor deposition (2010)
- Authors:
- USP affiliated authors: MATSUOKA, MASAO - IF ; ISOTANI, SADAO - IF ; ZAMBOM, LUIS DA SILVA - EP
- Unidades: IF; EP
- Assunto: ESPECTROSCOPIA DE RAIO X
- Language: Inglês
- Imprenta:
- Publisher: Elsevier Science
- Publisher place: Amsterdam
- Date published: 2010
- Source:
- Título do periódico: Surface & Coatings Technology
- ISSN: 0257-8972
- Volume/Número/Paginação/Ano: v. 204, p.18-19, 2923-2927, 2010
- Conference titles: International Workshop on Plasma-Based Ion Implantation and Deposition
-
ABNT
MATSUOKA, Masao et al. Chemical bonding and composition of silicon nitride films prepared by inductively coupled plasma chemical vapor deposition. Surface & Coatings Technology. Amsterdam: Elsevier Science. Disponível em: http://www.sciencedirect.com/science/journal/02578972. Acesso em: 19 abr. 2024. , 2010 -
APA
Matsuoka, M., Isotani, S., Mamani, W. A. S., Zambom, L. da S., & Ogata, K. (2010). Chemical bonding and composition of silicon nitride films prepared by inductively coupled plasma chemical vapor deposition. Surface & Coatings Technology. Amsterdam: Elsevier Science. Recuperado de http://www.sciencedirect.com/science/journal/02578972 -
NLM
Matsuoka M, Isotani S, Mamani WAS, Zambom L da S, Ogata K. Chemical bonding and composition of silicon nitride films prepared by inductively coupled plasma chemical vapor deposition [Internet]. Surface & Coatings Technology. 2010 ; 204 18-19.[citado 2024 abr. 19 ] Available from: http://www.sciencedirect.com/science/journal/02578972 -
Vancouver
Matsuoka M, Isotani S, Mamani WAS, Zambom L da S, Ogata K. Chemical bonding and composition of silicon nitride films prepared by inductively coupled plasma chemical vapor deposition [Internet]. Surface & Coatings Technology. 2010 ; 204 18-19.[citado 2024 abr. 19 ] Available from: http://www.sciencedirect.com/science/journal/02578972 - X-ray photoelectron spectroscopy analysis of zirconium nitride-like filmsprepared on Si(100) substrates by ion beam assisted deposition
- Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition
- Effects of arrival rate and gas pressure on the chemical bonding and composition in titanium nitride films prepared on Si(100) substrates by ion beam and vapor deposition
- Efeito de energia de ion e razao de transporte na composicao de filmes de oxido de zirconio preparados com ion-beam assisted deposition
- Estudo de ligações químicas entre carbono, nitrogênio e oxigênio nos filmes de nitreto de carbono produzidos por RF magnetron sputtering reativo
- Effects of ion energy and arrival rate on the composition of zirconium oxide films prepared by ion-beam assisted deposition
- Isothermal annealing of a 620 nm optical absorption band in Brazilian topaz crystals
- Efeito da energia de ions de oxigenio na formacao de filmes finos de oxido de zirconio com metodo de ion and vapor deposition
- Efeitos de "arrival rate" e de pressão de gás na composição de filmes de nitreto de titânio preparados com deposição assistida por feixe de íons
- Propriedades de filmes finos de Zr-N preparados com ion-beam assisted deposition
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