Confinement and surface effects in B and P doping of silicon nanowires (2008)
- Authors:
- USP affiliated authors: FAZZIO, ADALBERTO - IF ; SILVA, ANTONIO JOSE ROQUE DA - IF
- Unidade: IF
- Subjects: NANOPARTÍCULAS; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher place: Washington, DC
- Date published: 2008
- Source:
- Título: Nano Letters
- ISSN: 1530-6984
- Volume/Número/Paginação/Ano: v. 8, n. 7, p. 1866-1871, 2008
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ABNT
LEÃO, Cedric Rocha e FAZZIO, Adalberto e SILVA, Antonio Jose Roque da. Confinement and surface effects in B and P doping of silicon nanowires. Nano Letters, v. 8, n. 7, p. 1866-1871, 2008Tradução . . Disponível em: http://pubs.acs.org/doi/pdf/10.1021/nl080403d. Acesso em: 05 out. 2024. -
APA
Leão, C. R., Fazzio, A., & Silva, A. J. R. da. (2008). Confinement and surface effects in B and P doping of silicon nanowires. Nano Letters, 8( 7), 1866-1871. Recuperado de http://pubs.acs.org/doi/pdf/10.1021/nl080403d -
NLM
Leão CR, Fazzio A, Silva AJR da. Confinement and surface effects in B and P doping of silicon nanowires [Internet]. Nano Letters. 2008 ; 8( 7): 1866-1871.[citado 2024 out. 05 ] Available from: http://pubs.acs.org/doi/pdf/10.1021/nl080403d -
Vancouver
Leão CR, Fazzio A, Silva AJR da. Confinement and surface effects in B and P doping of silicon nanowires [Internet]. Nano Letters. 2008 ; 8( 7): 1866-1871.[citado 2024 out. 05 ] Available from: http://pubs.acs.org/doi/pdf/10.1021/nl080403d - Electronic and structural properties of "C IND.59" Si on the monohydride Si(100) surface
- First principles study of the ferromagnetism in "Ga IND.1-x" "Mn IND.x" As semiconductors
- Adsorption of "C IND.59" Si on Si(100) monohydride surface
- Influence of two vacancies in bubdles and isolated carbon naotubes
- {\it Ab initio} molecular dynamics study of pure and contaminated gold nanowires
- Comparative study of defect energetics in Hf'O IND.2' and Si'O IND. 2'
- Effect of impurities on the breaking of Au nanowires
- Adsorption and incorporation of Mn on Si(100)
- Microscopic picture of the single vacancy in germanium
- Adsorption of monomers on semiconductors and the importance of surface degrees of freedom
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