Confinement and surface effects in B and P doping of silicon nanowires (2008)
- Authors:
- USP affiliated authors: FAZZIO, ADALBERTO - IF ; SILVA, ANTONIO JOSE ROQUE DA - IF
- Unidade: IF
- Subjects: NANOPARTÍCULAS; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher place: Washington, DC
- Date published: 2008
- Source:
- Título: Nano Letters
- ISSN: 1530-6984
- Volume/Número/Paginação/Ano: v. 8, n. 7, p. 1866-1871, 2008
-
ABNT
LEÃO, Cedric Rocha e FAZZIO, Adalberto e SILVA, Antonio Jose Roque da. Confinement and surface effects in B and P doping of silicon nanowires. Nano Letters, v. 8, n. 7, p. 1866-1871, 2008Tradução . . Disponível em: http://pubs.acs.org/doi/pdf/10.1021/nl080403d. Acesso em: 27 jan. 2026. -
APA
Leão, C. R., Fazzio, A., & Silva, A. J. R. da. (2008). Confinement and surface effects in B and P doping of silicon nanowires. Nano Letters, 8( 7), 1866-1871. Recuperado de http://pubs.acs.org/doi/pdf/10.1021/nl080403d -
NLM
Leão CR, Fazzio A, Silva AJR da. Confinement and surface effects in B and P doping of silicon nanowires [Internet]. Nano Letters. 2008 ; 8( 7): 1866-1871.[citado 2026 jan. 27 ] Available from: http://pubs.acs.org/doi/pdf/10.1021/nl080403d -
Vancouver
Leão CR, Fazzio A, Silva AJR da. Confinement and surface effects in B and P doping of silicon nanowires [Internet]. Nano Letters. 2008 ; 8( 7): 1866-1871.[citado 2026 jan. 27 ] Available from: http://pubs.acs.org/doi/pdf/10.1021/nl080403d - A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole brilluoin zone
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