Effects of disorder on the exchange coupling in (Ga,Mn)As diluted magnetic semiconductors (2006)
- Authors:
- USP affiliated authors: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- DOI: 10.1590/s0103-97332006000600004
- Subjects: SEMICONDUTORES; PROPRIEDADES DOS MATERIAIS
- Language: Inglês
- Imprenta:
- Source:
- Título: Brazilian Journal of Physics
- ISSN: 0103-9733
- Volume/Número/Paginação/Ano: v. 36, n.3B, p. 813-816, 2006
- Este periódico é de acesso aberto
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: gold
- Licença: cc-by-nc
-
ABNT
SILVA, Antonio José Roque da et al. Effects of disorder on the exchange coupling in (Ga,Mn)As diluted magnetic semiconductors. Brazilian Journal of Physics, v. 36, n. 3B, p. 813-816, 2006Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332006000600004. Acesso em: 14 out. 2024. -
APA
Silva, A. J. R. da, Fazzio, A., Santos, R. R. dos, & Oliveira, L. E. (2006). Effects of disorder on the exchange coupling in (Ga,Mn)As diluted magnetic semiconductors. Brazilian Journal of Physics, 36( 3B), 813-816. doi:10.1590/s0103-97332006000600004 -
NLM
Silva AJR da, Fazzio A, Santos RR dos, Oliveira LE. Effects of disorder on the exchange coupling in (Ga,Mn)As diluted magnetic semiconductors [Internet]. Brazilian Journal of Physics. 2006 ; 36( 3B): 813-816.[citado 2024 out. 14 ] Available from: https://doi.org/10.1590/s0103-97332006000600004 -
Vancouver
Silva AJR da, Fazzio A, Santos RR dos, Oliveira LE. Effects of disorder on the exchange coupling in (Ga,Mn)As diluted magnetic semiconductors [Internet]. Brazilian Journal of Physics. 2006 ; 36( 3B): 813-816.[citado 2024 out. 14 ] Available from: https://doi.org/10.1590/s0103-97332006000600004 - Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
- Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)
- Eletronic and structural properties of 'C IND. 59'Si on a hydrogenated Si(100) surface
- A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor
- Adsoption of gold on carbon nanotubes
- Computer simulations of gold nanowires
- Ab initio study of an iron atom interacting with single-wall carbon nanotubes
- Electronic and magnetic properties of iron chains on carbon nanotubes
- Adsorption and incorporation of Mn on Si(100)
- Effect of impurities in the breaking of gold nanowires
Informações sobre o DOI: 10.1590/s0103-97332006000600004 (Fonte: oaDOI API)
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