Electronic and structural properties of Semiconducting nanowires (2006)
- Authors:
- USP affiliated authors: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
LEAO, Cedric Rocha e SILVA, Antonio Jose Roque da e FAZZIO, Adlberto. Electronic and structural properties of Semiconducting nanowires. 2006, Anais.. São Paulo: Instituto de Física, Universidade de São Paulo, 2006. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxix/sys/resumos/R1256-1.pdf. Acesso em: 10 out. 2024. -
APA
Leao, C. R., Silva, A. J. R. da, & Fazzio, A. (2006). Electronic and structural properties of Semiconducting nanowires. In . São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxix/sys/resumos/R1256-1.pdf -
NLM
Leao CR, Silva AJR da, Fazzio A. Electronic and structural properties of Semiconducting nanowires [Internet]. 2006 ;[citado 2024 out. 10 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxix/sys/resumos/R1256-1.pdf -
Vancouver
Leao CR, Silva AJR da, Fazzio A. Electronic and structural properties of Semiconducting nanowires [Internet]. 2006 ;[citado 2024 out. 10 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxix/sys/resumos/R1256-1.pdf - Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
- Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)
- Eletronic and structural properties of 'C IND. 59'Si on a hydrogenated Si(100) surface
- A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor
- Adsoption of gold on carbon nanotubes
- Computer simulations of gold nanowires
- Ab initio study of an iron atom interacting with single-wall carbon nanotubes
- Electronic and magnetic properties of iron chains on carbon nanotubes
- Adsorption and incorporation of Mn on Si(100)
- Effect of impurities in the breaking of gold nanowires
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