Substitutional Si doping in deformed carbon nanotubes (2004)
- Authors:
- USP affiliated authors: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Subjects: ESTRUTURA ELETRÔNICA; NANOTECNOLOGIA; PROPRIEDADES DOS MATERIAIS
- Language: Inglês
- Imprenta:
- Publisher place: Washington, DC
- Date published: 2004
- Source:
- Título: Nano Letters
- ISSN: 1530-6984
-
ABNT
FAGAN, Solange Binotto et al. Substitutional Si doping in deformed carbon nanotubes. Nano Letters, 2004Tradução . . Disponível em: http://pubs.acs.org/cgi-bin/article.cgi/nalefd/2004/4/i05/pdf/nl049805l.pdf. Acesso em: 09 nov. 2024. -
APA
Fagan, S. B., Mota, R., Silva, A. J. R. da, & Fazzio, A. (2004). Substitutional Si doping in deformed carbon nanotubes. Nano Letters. Recuperado de http://pubs.acs.org/cgi-bin/article.cgi/nalefd/2004/4/i05/pdf/nl049805l.pdf -
NLM
Fagan SB, Mota R, Silva AJR da, Fazzio A. Substitutional Si doping in deformed carbon nanotubes [Internet]. Nano Letters. 2004 ;[citado 2024 nov. 09 ] Available from: http://pubs.acs.org/cgi-bin/article.cgi/nalefd/2004/4/i05/pdf/nl049805l.pdf -
Vancouver
Fagan SB, Mota R, Silva AJR da, Fazzio A. Substitutional Si doping in deformed carbon nanotubes [Internet]. Nano Letters. 2004 ;[citado 2024 nov. 09 ] Available from: http://pubs.acs.org/cgi-bin/article.cgi/nalefd/2004/4/i05/pdf/nl049805l.pdf - Electronic and structural properties of "C IND.59" Si on the monohydride Si(100) surface
- First principles study of the ferromagnetism in "Ga IND.1-x" "Mn IND.x" As semiconductors
- Adsorption of "C IND.59" Si on Si(100) monohydride surface
- Influence of two vacancies in bubdles and isolated carbon naotubes
- {\it Ab initio} molecular dynamics study of pure and contaminated gold nanowires
- Comparative study of defect energetics in Hf'O IND.2' and Si'O IND. 2'
- Effect of impurities on the breaking of Au nanowires
- Adsorption and incorporation of Mn on Si(100)
- Microscopic picture of the single vacancy in germanium
- Adsorption of monomers on semiconductors and the importance of surface degrees of freedom
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