Comparative study of defect energetics in 'HfO IND. 2' and 'SiO IND. 2' (2003)
- Autores:
- Autores USP: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Assuntos: MATÉRIA CONDENSADA; MATERIAIS
- Idioma: Inglês
- Imprenta:
-
ABNT
SCOPEL, Wanderla Luis et al. Comparative study of defect energetics in 'HfO IND. 2' and 'SiO IND. 2'. . São Paulo: IFUSP. Disponível em: http://xxx.if.usp.br/PS_cache/cond-mat/pdf/0310/0310747.pdf. Acesso em: 08 nov. 2024. , 2003 -
APA
Scopel, W. L., Silva, A. J. R. da, Orellana, W., & Fazzio, A. (2003). Comparative study of defect energetics in 'HfO IND. 2' and 'SiO IND. 2'. São Paulo: IFUSP. Recuperado de http://xxx.if.usp.br/PS_cache/cond-mat/pdf/0310/0310747.pdf -
NLM
Scopel WL, Silva AJR da, Orellana W, Fazzio A. Comparative study of defect energetics in 'HfO IND. 2' and 'SiO IND. 2' [Internet]. 2003 ;[citado 2024 nov. 08 ] Available from: http://xxx.if.usp.br/PS_cache/cond-mat/pdf/0310/0310747.pdf -
Vancouver
Scopel WL, Silva AJR da, Orellana W, Fazzio A. Comparative study of defect energetics in 'HfO IND. 2' and 'SiO IND. 2' [Internet]. 2003 ;[citado 2024 nov. 08 ] Available from: http://xxx.if.usp.br/PS_cache/cond-mat/pdf/0310/0310747.pdf - Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
- Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)
- Eletronic and structural properties of 'C IND. 59'Si on a hydrogenated Si(100) surface
- A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor
- Adsoption of gold on carbon nanotubes
- Computer simulations of gold nanowires
- Ab initio study of an iron atom interacting with single-wall carbon nanotubes
- Electronic and magnetic properties of iron chains on carbon nanotubes
- Adsorption and incorporation of Mn on Si(100)
- Effect of impurities in the breaking of gold nanowires
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