Theoretical study of vancancies in 'Si IND.1-X' 'Ge IND.X' (2002)
- Authors:
- USP affiliated authors: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
DALPIAN, Gustavo Martini et al. Theoretical study of vancancies in 'Si IND.1-X' 'Ge IND.X'. 2002, Anais.. São Paulo: SBF, 2002. . Acesso em: 09 jan. 2026. -
APA
Dalpian, G. M., Venezuela, P., Silva, A. J. R. da, & Fazzio, A. (2002). Theoretical study of vancancies in 'Si IND.1-X' 'Ge IND.X'. In Resumos. São Paulo: SBF. -
NLM
Dalpian GM, Venezuela P, Silva AJR da, Fazzio A. Theoretical study of vancancies in 'Si IND.1-X' 'Ge IND.X'. Resumos. 2002 ;[citado 2026 jan. 09 ] -
Vancouver
Dalpian GM, Venezuela P, Silva AJR da, Fazzio A. Theoretical study of vancancies in 'Si IND.1-X' 'Ge IND.X'. Resumos. 2002 ;[citado 2026 jan. 09 ] - A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole brilluoin zone
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