Origin of the radiative emission in blue-green light emitting diodes based on GaN/InGaN heterostructures (2002)
- Autor:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1016/s0026-2692(01)00126-4
- Subjects: SEMICONDUTORES; DIFRAÇÃO POR RAIOS X; MUDANÇA DE FASE
- Language: Inglês
- Imprenta:
- Source:
- Título: Microeletronics Journal
- ISSN: 0026-2692
- Volume/Número/Paginação/Ano: v. 33, n. 4, p. 323-329, 2002
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
LEITE, J. R. Origin of the radiative emission in blue-green light emitting diodes based on GaN/InGaN heterostructures. Microeletronics Journal, v. 33, n. 4, p. 323-329, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(01)00126-4. Acesso em: 23 jan. 2026. -
APA
Leite, J. R. (2002). Origin of the radiative emission in blue-green light emitting diodes based on GaN/InGaN heterostructures. Microeletronics Journal, 33( 4), 323-329. doi:10.1016/s0026-2692(01)00126-4 -
NLM
Leite JR. Origin of the radiative emission in blue-green light emitting diodes based on GaN/InGaN heterostructures [Internet]. Microeletronics Journal. 2002 ; 33( 4): 323-329.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1016/s0026-2692(01)00126-4 -
Vancouver
Leite JR. Origin of the radiative emission in blue-green light emitting diodes based on GaN/InGaN heterostructures [Internet]. Microeletronics Journal. 2002 ; 33( 4): 323-329.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1016/s0026-2692(01)00126-4 - Optical properties of cubic InGaN epilayers grown by MBE
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- Polaronic effects on the intra-donor 1s'SETA''2p POT. '= OU -'' transition energies in GaN structures
- Theoretical LEED parameters for the zinc-blende GaN (110) surface
- Deep-levels in diamond: the substitucional nitrogen and the simple neutrol vacancy
- Self-consistent band structure calculations by the variational cellular method
- Semiconductor physics: procedings of the 3 rd brazilian school of semiconductor physics
- Evidence of Fabry-Pérot oscillations in the emission spectra of deep centers in cubic GaN epitaxial layers
- Deep-levels associated to chalcogen impurities in silicon
- Ferromagnetism in the metallic phase of (Ga, Mn)N nanostructures
Informações sobre o DOI: 10.1016/s0026-2692(01)00126-4 (Fonte: oaDOI API)
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