Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures (2002)
- Authors:
- USP affiliated authors: SIPAHI, GUILHERME MATOS - IFSC ; SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidades: IFSC; IF
- DOI: 10.1088/0953-8984/14/23/312
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Physics-Condensed Matter
- ISSN: 0953-8984
- Volume/Número/Paginação/Ano: v. 14, n. 23, p. 5813-5827, 2002
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
RODRIGUES, S. C. P. et al. Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures. Journal of Physics-Condensed Matter, v. 14, n. 23, p. 5813-5827, 2002Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/14/23/312. Acesso em: 15 out. 2024. -
APA
Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2002). Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures. Journal of Physics-Condensed Matter, 14( 23), 5813-5827. doi:10.1088/0953-8984/14/23/312 -
NLM
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures [Internet]. Journal of Physics-Condensed Matter. 2002 ; 14( 23): 5813-5827.[citado 2024 out. 15 ] Available from: https://doi.org/10.1088/0953-8984/14/23/312 -
Vancouver
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures [Internet]. Journal of Physics-Condensed Matter. 2002 ; 14( 23): 5813-5827.[citado 2024 out. 15 ] Available from: https://doi.org/10.1088/0953-8984/14/23/312 - Determining theoretical luminescence spectra using k.p method
- Inter- and intraband transitions in cubic nitride quantum wells
- Interband transitions in cubic AlGaN/GaN quantum wells
- Charge and spin distributions in 'Ga IND.1-x''Mn IND.x'/ GaAs ferromagnetic multilayers
- Propriedades eletrônicas de semicondutores magnéticos diluídos de 'Ga IND.1-x''Mn IND.x'As
- Spin-polarized charge densities in (In,Ga,Mn)As-based diluted magnetic semiconductor ternary and quaternary alloy heterostructures
- Theoretical luminescence spectra determination in GaAsN/GaAs quantum wells
- Calculated luminescence spectra of GaAs/Ga'As IND.1-x''N IND.x' derived heterostructures
- Exchange-correlation effects on the valence band structure of cubic AlGaN/GaN and GaN/InGaN superlattices
- Optical characterization of cubic AlGaN/GaN quantum wells
Informações sobre o DOI: 10.1088/0953-8984/14/23/312 (Fonte: oaDOI API)
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas