Interband transitions in cubic AlGaN/GaN quantum wells (2002)
- Authors:
- USP affiliated authors: SIPAHI, GUILHERME MATOS - IFSC ; SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidades: IFSC; IF
- Assunto: FÍSICA DA MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
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ABNT
SIPAHI, Guilherme Matos et al. Interband transitions in cubic AlGaN/GaN quantum wells. 2002, Anais.. São Paulo: SBF, 2002. . Acesso em: 13 nov. 2024. -
APA
Sipahi, G. M., Rodrigues, S. C. P., Noriega, O. C., Scolfaro, L. M. R., Leite, J. R., Frey, T., & Lischka, K. (2002). Interband transitions in cubic AlGaN/GaN quantum wells. In Resumos. São Paulo: SBF. -
NLM
Sipahi GM, Rodrigues SCP, Noriega OC, Scolfaro LMR, Leite JR, Frey T, Lischka K. Interband transitions in cubic AlGaN/GaN quantum wells. Resumos. 2002 ;[citado 2024 nov. 13 ] -
Vancouver
Sipahi GM, Rodrigues SCP, Noriega OC, Scolfaro LMR, Leite JR, Frey T, Lischka K. Interband transitions in cubic AlGaN/GaN quantum wells. Resumos. 2002 ;[citado 2024 nov. 13 ] - Photoluminescence and photoreflectance vharacterization of cubic GaN/AlxGa1-xN quantum wells
- Theoretical luminescence spectra determination in GaAsN/GaAs quantum wells
- Calculated luminescence spectra of GaAs/Ga'As IND.1-x''N IND.x' derived heterostructures
- Exchange-correlation effects on the valence band structure of cubic AlGaN/GaN and GaN/InGaN superlattices
- Optical characterization of cubic AlGaN/GaN quantum wells
- Valence-band structure of InGaAs/InGaMnAs magnetic multilayers
- Optical and electronic properties of diluted magnetic semicondutors
- Electronic and optical properties of AlGaN/GaN superlattices under electric fields
- K center dot p calculations of electronic and optical properties of p-doped (001) AlGaN/GaN thin superlattices
- Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures
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