Electronic properties of GaAs/Ga'As IND.1-x''N IND.x' multiple quantum wells (2001)
- Authors:
- USP affiliated authors: SIPAHI, GUILHERME MATOS - IFSC ; SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidades: IFSC; IF
- Subjects: FÍSICA DA MATÉRIA CONDENSADA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: INPE
- Publisher place: São José dos Campos
- Date published: 2001
- Source:
- Título do periódico: Program and abstracts
- Conference titles: Ibero American Workshop on Nanostructures for Application in Micro and Optoelectronics
-
ABNT
RODRIGUES, S C P et al. Electronic properties of GaAs/Ga'As IND.1-x''N IND.x' multiple quantum wells. 2001, Anais.. São José dos Campos: INPE, 2001. . Acesso em: 23 abr. 2024. -
APA
Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2001). Electronic properties of GaAs/Ga'As IND.1-x''N IND.x' multiple quantum wells. In Program and abstracts. São José dos Campos: INPE. -
NLM
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Electronic properties of GaAs/Ga'As IND.1-x''N IND.x' multiple quantum wells. Program and abstracts. 2001 ;[citado 2024 abr. 23 ] -
Vancouver
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Electronic properties of GaAs/Ga'As IND.1-x''N IND.x' multiple quantum wells. Program and abstracts. 2001 ;[citado 2024 abr. 23 ] - Controlling the charge and the spin polarization distributions in (In,Ga,Mn)As-based diluted magnetic semiconductor multilayered structures
- Luminescence spectra in metallic and ferromagnetic GaMnAs/GaAs multilayers: a self-consistent super-cell Kane K.p calculation
- (Ga, Mn)N-based ferromagnetic superlattices: eletronic properties
- Electronic properties of GaMnAs diluted magnetic semiconductors
- Luminescence spectra in metallic and ferromagnetic GaMnAs/GaAs multilayers: a self-consistent super-cell Luttinger Kohn k. p calculation
- Theoretical luminescence spectra determination in GaAsN/GaAs quantum wells
- Optical characterization of cubic AlGaN/GaN quantum wells
- Calculated luminescence spectra of GaAs/Ga'As IND.1-x''N IND.x' derived heterostructures
- Exchange-correlation effects on the valence band structure of cubic AlGaN/GaN and GaN/InGaN superlattices
- Valence-band structure of InGaAs/InGaMnAs magnetic multilayers
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