Two-atom structures of Ge on Si(100): dimers versus adatom pairs (2001)
- Authors:
- USP affiliated authors: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Subjects: MICROSCOPIA ELETRÔNICA DE VARREDURA; DINÂMICA; SUPERFÍCIE FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Physical Review Letters
- ISSN: 0031-9007
- Volume/Número/Paginação/Ano: v. 87, n. 3, p. 6104/1-6104/4, 2001
-
ABNT
SILVA, Antonio Jose Roque da et al. Two-atom structures of Ge on Si(100): dimers versus adatom pairs. Physical Review Letters, v. 87, n. 3, p. 6104/1-6104/4, 2001Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000087000003036104000001&idtype=cvips. Acesso em: 27 dez. 2025. -
APA
Silva, A. J. R. da, Dalpian, G. M., Janotti, A., & Fazzio, A. (2001). Two-atom structures of Ge on Si(100): dimers versus adatom pairs. Physical Review Letters, 87( 3), 6104/1-6104/4. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000087000003036104000001&idtype=cvips -
NLM
Silva AJR da, Dalpian GM, Janotti A, Fazzio A. Two-atom structures of Ge on Si(100): dimers versus adatom pairs [Internet]. Physical Review Letters. 2001 ; 87( 3): 6104/1-6104/4.[citado 2025 dez. 27 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000087000003036104000001&idtype=cvips -
Vancouver
Silva AJR da, Dalpian GM, Janotti A, Fazzio A. Two-atom structures of Ge on Si(100): dimers versus adatom pairs [Internet]. Physical Review Letters. 2001 ; 87( 3): 6104/1-6104/4.[citado 2025 dez. 27 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000087000003036104000001&idtype=cvips - Adatoms in graphene as a source of current polarization: role of the local magnetic moment
- Comparative study of defect energetics in 'HF' IND. 2' and 'SI' IND. 2'
- Diffusion-reaction mechanisms of nitriding species in 'SI''O IND. 2'
- Ab initio study for N 'H IND.3' sensors based on C'N IND. x' nanotubes
- Ab initio simulation of double-wall carbon nanotubes with crosslink defects: applications in electromechanical devices
- Defects in amorphous hafnium silicate
- A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole Brilluoin zone
- Van der waals heterostructure of phosphorene and graphene: tuning the shottky barrier and doping by electrostatic gating
- Adiabatic molecular dynamic: an approach to simulate light atoms
- Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5'
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
