The effect of a stacking fault on the electronic properties of dopants in gallium arsenide (2000)
- Authors:
- Autor USP: FAZZIO, ADALBERTO - IF
- Unidade: IF
- DOI: 10.1088/0953-8984/12/49/323
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Physics-Condensed Matter
- ISSN: 0953-8984
- Volume/Número/Paginação/Ano: v. 12, n. 49, p. 10235-10239, 2000
- Status:
- Nenhuma versão em acesso aberto identificada
-
ABNT
SCHMIDT, T M e JUSTO FILHO, João Francisco e FAZZIO, Adalberto. The effect of a stacking fault on the electronic properties of dopants in gallium arsenide. Journal of Physics-Condensed Matter, v. 12, n. 49, p. 10235-10239, 2000Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/12/49/323. Acesso em: 06 maio 2026. -
APA
Schmidt, T. M., Justo Filho, J. F., & Fazzio, A. (2000). The effect of a stacking fault on the electronic properties of dopants in gallium arsenide. Journal of Physics-Condensed Matter, 12( 49), 10235-10239. doi:10.1088/0953-8984/12/49/323 -
NLM
Schmidt TM, Justo Filho JF, Fazzio A. The effect of a stacking fault on the electronic properties of dopants in gallium arsenide [Internet]. Journal of Physics-Condensed Matter. 2000 ; 12( 49): 10235-10239.[citado 2026 maio 06 ] Available from: https://doi.org/10.1088/0953-8984/12/49/323 -
Vancouver
Schmidt TM, Justo Filho JF, Fazzio A. The effect of a stacking fault on the electronic properties of dopants in gallium arsenide [Internet]. Journal of Physics-Condensed Matter. 2000 ; 12( 49): 10235-10239.[citado 2026 maio 06 ] Available from: https://doi.org/10.1088/0953-8984/12/49/323 - Conformational analysis of tannic acid: environment effects in electronic and reactivity properties
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