Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate (1999)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: MATÉRIA CONDENSADA; FÍSICA DA MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
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ABNT
TABATA, Americo et al. Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate. . São Paulo: IFUSP. Disponível em: http://publica-sbi.if.usp.br/PDFs/pd1360.pdf. Acesso em: 10 jan. 2026. , 1999 -
APA
Tabata, A., Lima, A. P., Leite, J. R., Lemos, V., Schikora, D., Schottker, B., et al. (1999). Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate. São Paulo: IFUSP. Recuperado de http://publica-sbi.if.usp.br/PDFs/pd1360.pdf -
NLM
Tabata A, Lima AP, Leite JR, Lemos V, Schikora D, Schottker B, Kohler U, As DJ, Lischka K. Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate [Internet]. 1999 ;[citado 2026 jan. 10 ] Available from: http://publica-sbi.if.usp.br/PDFs/pd1360.pdf -
Vancouver
Tabata A, Lima AP, Leite JR, Lemos V, Schikora D, Schottker B, Kohler U, As DJ, Lischka K. Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate [Internet]. 1999 ;[citado 2026 jan. 10 ] Available from: http://publica-sbi.if.usp.br/PDFs/pd1360.pdf - Deep-levels associated to chalcogen impurities in silicon
- Electronic structure of the point defects gap: 'V IND.P' and gap : ' O IND.P'
- 2D-3D transition in a parabolic quantum well
- Self-consistent one-electron states of substitutional and interstitial 5d transition-atom impurities in silicon
- Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN: Si
- Dynamical and thermodynamic properties of III-nitrides
- One-electron states induced by 3d transition metal impurities diamond
- Atomic and electronic structures of 'In IND.X' 'Ga IND.1-X' N quantum dots
- Optical studies on the incorporation of carbon as a dopant in cubic GaN
- Improving of the p-type doping by carbon in cubic GaN samples under Ga-rich growth conditions
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