Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate (1999)
- Autores:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assuntos: MATÉRIA CONDENSADA; FÍSICA DA MATÉRIA CONDENSADA
- Idioma: Inglês
- Imprenta:
-
ABNT
TABATA, Americo et al. Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate. . São Paulo: IFUSP. Disponível em: http://publica-sbi.if.usp.br/PDFs/pd1360.pdf. Acesso em: 11 nov. 2024. , 1999 -
APA
Tabata, A., Lima, A. P., Leite, J. R., Lemos, V., Schikora, D., Schottker, B., et al. (1999). Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate. São Paulo: IFUSP. Recuperado de http://publica-sbi.if.usp.br/PDFs/pd1360.pdf -
NLM
Tabata A, Lima AP, Leite JR, Lemos V, Schikora D, Schottker B, Kohler U, As DJ, Lischka K. Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate [Internet]. 1999 ;[citado 2024 nov. 11 ] Available from: http://publica-sbi.if.usp.br/PDFs/pd1360.pdf -
Vancouver
Tabata A, Lima AP, Leite JR, Lemos V, Schikora D, Schottker B, Kohler U, As DJ, Lischka K. Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate [Internet]. 1999 ;[citado 2024 nov. 11 ] Available from: http://publica-sbi.if.usp.br/PDFs/pd1360.pdf - Propriedades eletronicas dos complexos ouro substitucional-metal de transicao intersticial em silicio
- Current research on semiconductor physics
- Hydrogen passivation of shallow acceptor levels in crystalline silicon
- Estrutura eletronica do semicondutor diamante tipo p
- Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy
- Semiconductor physics: procedings of the 3 rd brazilian school of semiconductor physics
- Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium
- Deep levels induced by 3d transition metal impurities in diamond
- Native surface defects at low-index reconstructed cubic GaN surfaces
- Evidence of Fabry-Pérot oscillations in the emission spectra of deep centers in cubic GaN epitaxial layers
Como citar
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
