Electronic and structural properties of complex defects in GaAs (1998)
- Authors:
- Autor USP: FAZZIO, ADALBERTO - IF
- Unidade: IF
- Assunto: FÍSICA
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Física
- Publisher place: São Paulo
- Date published: 1998
- Source:
- Título: Brazilian Journal of Physics
- Volume/Número/Paginação/Ano: v. 27A, n. 4, p.110-115, 1998
- Conference titles: Brazilian Workshop on Semiconductor Physics
-
ABNT
JANOTTI, A. et al. Electronic and structural properties of complex defects in GaAs. Brazilian Journal of Physics. São Paulo: Sociedade Brasileira de Física. . Acesso em: 27 dez. 2025. , 1998 -
APA
Janotti, A., Fazzio, A., Piquini, P., & Mota, R. (1998). Electronic and structural properties of complex defects in GaAs. Brazilian Journal of Physics. São Paulo: Sociedade Brasileira de Física. -
NLM
Janotti A, Fazzio A, Piquini P, Mota R. Electronic and structural properties of complex defects in GaAs. Brazilian Journal of Physics. 1998 ; 27A( 4): 110-115.[citado 2025 dez. 27 ] -
Vancouver
Janotti A, Fazzio A, Piquini P, Mota R. Electronic and structural properties of complex defects in GaAs. Brazilian Journal of Physics. 1998 ; 27A( 4): 110-115.[citado 2025 dez. 27 ] - First principles calculations of As impurities in the presence of a "90 GRAUS" partial dislocation in Si
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