First principles calculations of As impurities in the presence of a "90 GRAUS" partial dislocation in Si (2006)
- Authors:
- Autor USP: FAZZIO, ADALBERTO - IF
- Unidade: IF
- Subjects: ESTRUTURA ELETRÔNICA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Brazilian Journal of Physics
- Volume/Número/Paginação/Ano: v. 36, n. 2A, p. 261-263, 2006
-
ABNT
SCHMIDT, T M e ARANTES JUNIOR, Jeverson Teodoro e FAZZIO, Adalberto. First principles calculations of As impurities in the presence of a "90 GRAUS" partial dislocation in Si. Brazilian Journal of Physics, v. 36, n. 2A, p. 261-263, 2006Tradução . . Disponível em: http://www.sbfisica.org.br/bjp/files/v36_261.pdf. Acesso em: 27 dez. 2025. -
APA
Schmidt, T. M., Arantes Junior, J. T., & Fazzio, A. (2006). First principles calculations of As impurities in the presence of a "90 GRAUS" partial dislocation in Si. Brazilian Journal of Physics, 36( 2A), 261-263. Recuperado de http://www.sbfisica.org.br/bjp/files/v36_261.pdf -
NLM
Schmidt TM, Arantes Junior JT, Fazzio A. First principles calculations of As impurities in the presence of a "90 GRAUS" partial dislocation in Si [Internet]. Brazilian Journal of Physics. 2006 ; 36( 2A): 261-263.[citado 2025 dez. 27 ] Available from: http://www.sbfisica.org.br/bjp/files/v36_261.pdf -
Vancouver
Schmidt TM, Arantes Junior JT, Fazzio A. First principles calculations of As impurities in the presence of a "90 GRAUS" partial dislocation in Si [Internet]. Brazilian Journal of Physics. 2006 ; 36( 2A): 261-263.[citado 2025 dez. 27 ] Available from: http://www.sbfisica.org.br/bjp/files/v36_261.pdf - First principles calculations of As impurities in the presence of a "90 GRAUS" partial dislocation in Si
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