Electronic structure of periodically 'SI'-'GAMA'-doped'GA''AS' (1995)
- Authors:
- Autor USP: FAZZIO, ADALBERTO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Internatinal Journal of Quantum Chemistry: Quantum Chemistry Symposium
- Volume/Número/Paginação/Ano: v.29, p.203-6, 1995
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ABNT
FAZZIO, A e SCHMIDT, T M. Electronic structure of periodically 'SI'-'GAMA'-doped'GA''AS'. Internatinal Journal of Quantum Chemistry: Quantum Chemistry Symposium, v. 29, p. 203-6, 1995Tradução . . Acesso em: 16 jul. 2025. -
APA
Fazzio, A., & Schmidt, T. M. (1995). Electronic structure of periodically 'SI'-'GAMA'-doped'GA''AS'. Internatinal Journal of Quantum Chemistry: Quantum Chemistry Symposium, 29, 203-6. -
NLM
Fazzio A, Schmidt TM. Electronic structure of periodically 'SI'-'GAMA'-doped'GA''AS'. Internatinal Journal of Quantum Chemistry: Quantum Chemistry Symposium. 1995 ;29 203-6.[citado 2025 jul. 16 ] -
Vancouver
Fazzio A, Schmidt TM. Electronic structure of periodically 'SI'-'GAMA'-doped'GA''AS'. Internatinal Journal of Quantum Chemistry: Quantum Chemistry Symposium. 1995 ;29 203-6.[citado 2025 jul. 16 ] - Spectral distribution of photoionization cross section of 'FE POT.2+' in inp: 'FE'
- Terras raras em gap
- Estrutura eletronica e geometrica dos clusters de 'GA IND.N' 'AS IND.M' (n,m = 1-3)
- Estrutura eletronica da microestrutura: 'GA IND.N' 'AS IND.M'
- Role played by n and n-n impurities in type-'IV' semiconductors
- Theoretical investigation of the optical spectra of superconducting 'YBA IND.2''CU IND.3''O IND.7'
- Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan
- Optical transitions in ruby across the corundum to 'Rh IND.2''O IND.3' (II) phase transformation
- Gap e 'GA''AS' dopados com 'V POT.2+': baixo spin x alto spin
- "P IND. In' antisite in InP: structural and electronic properties
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