'AL IND.0.47' 'IN IND.0.53' 'AS' / 'IN'p heterostructure grown by mbe (1995)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC ; MAREGA JUNIOR, EUCLYDES - IFSC ; GUIMARAES, FRANCISCO EDUARDO GONTIJO - IFSC
- Unidade: IFSC
- Subjects: SUPERFÍCIE FÍSICA; FILMES FINOS; MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Ufrgs
- Publisher place: Porto Alegre
- Date published: 1995
- Source:
- Título: Scientific Program and Abstracts
- Conference titles: Simposio Latino-Americano de Fisica do Estado Solido
-
ABNT
SISNIEGA, G et al. 'AL IND.0.47' 'IN IND.0.53' 'AS' / 'IN'p heterostructure grown by mbe. 1995, Anais.. Porto Alegre: Ufrgs, 1995. . Acesso em: 25 jan. 2026. -
APA
Sisniega, G., González-Borrero, P. P., Guimarães, F. E. G., Lubyshev, D. I., Petitprez, E., Marega Junior, E., & Basmaji, P. (1995). 'AL IND.0.47' 'IN IND.0.53' 'AS' / 'IN'p heterostructure grown by mbe. In Scientific Program and Abstracts. Porto Alegre: Ufrgs. -
NLM
Sisniega G, González-Borrero PP, Guimarães FEG, Lubyshev DI, Petitprez E, Marega Junior E, Basmaji P. 'AL IND.0.47' 'IN IND.0.53' 'AS' / 'IN'p heterostructure grown by mbe. Scientific Program and Abstracts. 1995 ;[citado 2026 jan. 25 ] -
Vancouver
Sisniega G, González-Borrero PP, Guimarães FEG, Lubyshev DI, Petitprez E, Marega Junior E, Basmaji P. 'AL IND.0.47' 'IN IND.0.53' 'AS' / 'IN'p heterostructure grown by mbe. Scientific Program and Abstracts. 1995 ;[citado 2026 jan. 25 ] - Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' heterostructures
- Optical anisotropy in (311) 'IN IND.1-X''GA IND.X''AS' / 'GA''AS' quantum wells
- Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' heterostructures
- Optical anisotropy in (311) 'IN''GA''AS' / 'GA''AS' quantum wells
- Influence of surface structure on segregation and alloy quality in (100) and (311) oriented InGaAs/GaAs heterostructures
- Luminescence centers in porous silicon
- Propriedades oticas de heteroestruturas semicondutoras de 'IN''GA''AS' / 'GA''AS' crescidas nas direcoes [100] e [311]
- Influence of surface structure on segregation and alloy properties in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' heterostructures
- Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' heterostructures
- Temperature effects on the optical properties of InGaAs/GaAs single quantum wells grown on high index GaAs substrates with non-abrupt interfaces
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