Influence of the pecvd reactor architecture in deposition parameters in the structural and electrical characteristics of the a-'SI': h films

Influence of the pecvd reactor architecture in deposition parameters in the structural and electrical characteristics of the a-'SI': h films (1995)

Authors:
- Bottecchia, J P
- Andrade, Adnei Melges de
Autor USP: ANDRADE, ADNEI MELGES DE - EP
Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
Language: Inglês
Imprenta:
- Publisher: Instituto de Informatica da Ufrgs
- Publisher place: Porto Alegre
- Date published: 1995
Source:
- Título: Proceedings
Conference titles: Congress of the Brazilian Microelectronics Society

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ABNT

BOTTECCHIA, J P e ANDRADE, Adnei Melges de. Influence of the pecvd reactor architecture in deposition parameters in the structural and electrical characteristics of the a-'SI': h films. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 19 fev. 2026.
APA

Bottecchia, J. P., & Andrade, A. M. de. (1995). Influence of the pecvd reactor architecture in deposition parameters in the structural and electrical characteristics of the a-'SI': h films. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM

Bottecchia JP, Andrade AM de. Influence of the pecvd reactor architecture in deposition parameters in the structural and electrical characteristics of the a-'SI': h films. Proceedings. 1995 ;[citado 2026 fev. 19 ]
Vancouver

Bottecchia JP, Andrade AM de. Influence of the pecvd reactor architecture in deposition parameters in the structural and electrical characteristics of the a-'SI': h films. Proceedings. 1995 ;[citado 2026 fev. 19 ]