Electronic structure of ' ('ga'P) IND.N' ' ('i ind.N'P) IND.N' and ' ('ga''as') IND.N'' ('i ind.N''as') IND. N' superlattices with n'< OU ='7 (1992)
- Authors:
- USP affiliated author: FERRAZ, ARMANDO CORBANI - IF
- School: IF
- Subject: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: World Scientific
- Place of publication: Singapura
- Date published: 1992
- Source:
- Título do periódico: Brazilian School Semiconductor Physics, 5
-
ABNT
FIGUEIREDO, S K e FERRAZ, A. C. Electronic structure of ' ('ga'P) IND.N' ' ('i ind.N'P) IND.N' and ' ('ga''as') IND.N'' ('i ind.N''as') IND. N' superlattices with n'< OU ='7. Brazilian School Semiconductor Physics, 5. Tradução . Singapura: World Scientific, 1992. . . Acesso em: 27 jun. 2022. -
APA
Figueiredo, S. K., & Ferraz, A. C. (1992). Electronic structure of ' ('ga'P) IND.N' ' ('i ind.N'P) IND.N' and ' ('ga''as') IND.N'' ('i ind.N''as') IND. N' superlattices with n'< OU ='7. In Brazilian School Semiconductor Physics, 5. Singapura: World Scientific. -
NLM
Figueiredo SK, Ferraz AC. Electronic structure of ' ('ga'P) IND.N' ' ('i ind.N'P) IND.N' and ' ('ga''as') IND.N'' ('i ind.N''as') IND. N' superlattices with n'< OU ='7. In: Brazilian School Semiconductor Physics, 5. Singapura: World Scientific; 1992. [citado 2022 jun. 27 ] -
Vancouver
Figueiredo SK, Ferraz AC. Electronic structure of ' ('ga'P) IND.N' ' ('i ind.N'P) IND.N' and ' ('ga''as') IND.N'' ('i ind.N''as') IND. N' superlattices with n'< OU ='7. In: Brazilian School Semiconductor Physics, 5. Singapura: World Scientific; 1992. [citado 2022 jun. 27 ] - Sulfur radicals as tethers for the adsorption of aromatic molecules on silicon surface
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