Electronic structure of ' ('ga'P) IND.N' ' ('i ind.N'P) IND.N' and ' ('ga''as') IND.N'' ('i ind.N''as') IND. N' superlattices with n'< OU ='7 (1992)
- Authors:
- Autor USP: FERRAZ, ARMANDO CORBANI - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapura
- Date published: 1992
- Source:
-
ABNT
FIGUEIREDO, S K e FERRAZ, A. C. Electronic structure of ' ('ga'P) IND.N' ' ('i ind.N'P) IND.N' and ' ('ga''as') IND.N'' ('i ind.N''as') IND. N' superlattices with n'< OU ='7. Brazilian School Semiconductor Physics, 5. Tradução . Singapura: World Scientific, 1992. . . Acesso em: 09 dez. 2025. -
APA
Figueiredo, S. K., & Ferraz, A. C. (1992). Electronic structure of ' ('ga'P) IND.N' ' ('i ind.N'P) IND.N' and ' ('ga''as') IND.N'' ('i ind.N''as') IND. N' superlattices with n'< OU ='7. In Brazilian School Semiconductor Physics, 5. Singapura: World Scientific. -
NLM
Figueiredo SK, Ferraz AC. Electronic structure of ' ('ga'P) IND.N' ' ('i ind.N'P) IND.N' and ' ('ga''as') IND.N'' ('i ind.N''as') IND. N' superlattices with n'< OU ='7. In: Brazilian School Semiconductor Physics, 5. Singapura: World Scientific; 1992. [citado 2025 dez. 09 ] -
Vancouver
Figueiredo SK, Ferraz AC. Electronic structure of ' ('ga'P) IND.N' ' ('i ind.N'P) IND.N' and ' ('ga''as') IND.N'' ('i ind.N''as') IND. N' superlattices with n'< OU ='7. In: Brazilian School Semiconductor Physics, 5. Singapura: World Scientific; 1992. [citado 2025 dez. 09 ] - Electronic band structure of ' ( 'ga''as' ) IND.N'' (A1AS) IND.N' superlattices
- Electronic band structure of ' (GAAS) IND.N'' (ALAS) IND.N' and ' (GAAS) IND.N'' (ZNSE) IND.N' superlattices
- Electronic structure of ' ('ga'P) IND.N' ' ('i ind.N'P) IND.N' and ' ('ga''as') IND.N'' ('i ind.N''as') IND. N' superlattices with n'< OU ='7
- Estabilidade em super-redes iii-v
- Adsorcao de 'TE' em superficies de 'GA''AS' e 'IN''AS'
- Descontinuidade das faixas de valencia das interfaces 'AI''AS': 'SI' : 'GA''AS'e'AI''AS' : 'GE' : 'GA''AS'
- Estrutura eletrônica das superfícies GaAs:Te e InAs:Te
- Estrutura eletrônica de superfícies e super-redes de semicondutores
- Dissociative adsorption of 'NF IND.3' on Si(001)-(2 X 1)
- Passivation of InP(001) by sulfur
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