Band-structure and interface geometry for ' (GAP) IND.N' ' (INP) IND.N' supperlattices (1991)
- Authors:
- USP affiliated authors: FERRAZ, ARMANDO CORBANI - IF
- Unidades: IF
- Subjects: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Superlattices and Microstructures
- Volume/Número/Paginação/Ano: v.10, p.193-5, 1991
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ABNT
FERRAZ, A. C.; FIGUEIREDO, S K. Band-structure and interface geometry for ' (GAP) IND.N' ' (INP) IND.N' supperlattices. Superlattices and Microstructures, London, v. 10, p. 193-5, 1991. -
APA
Ferraz, A. C., & Figueiredo, S. K. (1991). Band-structure and interface geometry for ' (GAP) IND.N' ' (INP) IND.N' supperlattices. Superlattices and Microstructures, 10, 193-5. -
NLM
Ferraz AC, Figueiredo SK. Band-structure and interface geometry for ' (GAP) IND.N' ' (INP) IND.N' supperlattices. Superlattices and Microstructures. 1991 ;10 193-5. -
Vancouver
Ferraz AC, Figueiredo SK. Band-structure and interface geometry for ' (GAP) IND.N' ' (INP) IND.N' supperlattices. Superlattices and Microstructures. 1991 ;10 193-5. - Sulfur radicals as tethers for the adsorption of aromatic molecules on silicon surface
- Structure of PEP-PEO block copolymer micelles: exploiting the complementarity of small-angle X-ray scattering and static light scattering
- Dissociative adsorption of 'NF IND.3' on Si(001)-(2 X 1)
- Ab initio study of substitutional nitrogen in GaAs
- Theoretical calculations for Si(001)-(2x1)Cl
- Estrutura eletrônica das superfícies GaAs:Te e InAs:Te
- Passivation of InP(001) by sulfur
- Electronic band structure of ' ( 'ga''as' ) IND.N'' (A1AS) IND.N' superlattices
- Electronic band structure of ' (GAAS) IND.N'' (ALAS) IND.N' and ' (GAAS) IND.N'' (ZNSE) IND.N' superlattices
- Self-consistent variational celular schene applied to semiconductors of group iv and iii-v compounds
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