Electronic band structure of ' ( 'ga''as' ) IND.N'' (A1AS) IND.N' superlattices (1986)
- Authors:
- USP affiliated author: FERRAZ, ARMANDO CORBANI - IF
- School: IF
- Subject: ESTRUTURA ELETRÔNICA
- Language: Português
- Source:
- Título do periódico: Semiconductors Science Technology
- Volume/Número/Paginação/Ano: v.1 , n.3 , p.169-71, 1986
-
ABNT
FERRAZ, A. C.; SRIVASTAVA, G. P. Electronic band structure of ' ( 'ga''as' ) IND.N'' (A1AS) IND.N' superlattices. Semiconductors Science Technology[S.l.], v. 1 , n. 3 , p. 169-71, 1986. -
APA
Ferraz, A. C., & Srivastava, G. P. (1986). Electronic band structure of ' ( 'ga''as' ) IND.N'' (A1AS) IND.N' superlattices. Semiconductors Science Technology, 1 ( 3 ), 169-71. -
NLM
Ferraz AC, Srivastava GP. Electronic band structure of ' ( 'ga''as' ) IND.N'' (A1AS) IND.N' superlattices. Semiconductors Science Technology. 1986 ;1 ( 3 ): 169-71. -
Vancouver
Ferraz AC, Srivastava GP. Electronic band structure of ' ( 'ga''as' ) IND.N'' (A1AS) IND.N' superlattices. Semiconductors Science Technology. 1986 ;1 ( 3 ): 169-71. - Sulfur radicals as tethers for the adsorption of aromatic molecules on silicon surface
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- Electronic band structure of ' (GAAS) IND.N'' (ALAS) IND.N' and ' (GAAS) IND.N'' (ZNSE) IND.N' superlattices
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- Estabilidade em super-redes iii-v
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