Formation of 3C-SIC films on silicon by thermal annealing process (2004)
Oliveira, Alessandro Ricardo de; Paez Carreño, Marcelo Nelson 
Source: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Subjects: MICROELETRÔNICA, FILMES FINOS
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OLIVEIRA, Alessandro Ricardo de e PAEZ CARREÑO, Marcelo Nelson. Formation of 3C-SIC films on silicon by thermal annealing process. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 18 nov. 2025.APA
Oliveira, A. R. de, & Paez Carreño, M. N. (2004). Formation of 3C-SIC films on silicon by thermal annealing process. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.NLM
Oliveira AR de, Paez Carreño MN. Formation of 3C-SIC films on silicon by thermal annealing process. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 18 ]Vancouver
Oliveira AR de, Paez Carreño MN. Formation of 3C-SIC films on silicon by thermal annealing process. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 18 ]
