Selenium delta doped in almost single monolayer grown by molecular beam epitaxy (1991)
Source: Proceedings. Conference titles: Brazilian School on Semicondutores Physics. Unidade: IFSC
Subjects: SELÊNIO, TEMPERATURA
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ABNT
NOTARI, A. C. Selenium delta doped in almost single monolayer grown by molecular beam epitaxy. 1991, Anais.. São Paulo: Instituto de Física de São Carlos, Universidade de São Paulo, 1991. Disponível em: https://repositorio.usp.br/directbitstream/e6965d6f-0a6c-4327-b891-6cfdba5f5ab4/PROD001230_1546967.pdf. Acesso em: 12 nov. 2025.APA
Notari, A. C. (1991). Selenium delta doped in almost single monolayer grown by molecular beam epitaxy. In Proceedings. São Paulo: Instituto de Física de São Carlos, Universidade de São Paulo. Recuperado de https://repositorio.usp.br/directbitstream/e6965d6f-0a6c-4327-b891-6cfdba5f5ab4/PROD001230_1546967.pdfNLM
Notari AC. Selenium delta doped in almost single monolayer grown by molecular beam epitaxy [Internet]. Proceedings. 1991 ;[citado 2025 nov. 12 ] Available from: https://repositorio.usp.br/directbitstream/e6965d6f-0a6c-4327-b891-6cfdba5f5ab4/PROD001230_1546967.pdfVancouver
Notari AC. Selenium delta doped in almost single monolayer grown by molecular beam epitaxy [Internet]. Proceedings. 1991 ;[citado 2025 nov. 12 ] Available from: https://repositorio.usp.br/directbitstream/e6965d6f-0a6c-4327-b891-6cfdba5f5ab4/PROD001230_1546967.pdf
