A simple method to model nonrectangular-gate layout in SOI MOSFETs (2005)
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
ABNT
GIACOMINI, Renato Camargo e MARTINO, João Antonio. A simple method to model nonrectangular-gate layout in SOI MOSFETs. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 15 nov. 2025.APA
Giacomini, R. C., & Martino, J. A. (2005). A simple method to model nonrectangular-gate layout in SOI MOSFETs. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.NLM
Giacomini RC, Martino JA. A simple method to model nonrectangular-gate layout in SOI MOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 15 ]Vancouver
Giacomini RC, Martino JA. A simple method to model nonrectangular-gate layout in SOI MOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 15 ]

