Galeti, Milene; Claeys, Cor 
; Martino, João Antonio ; Simoen, Eddy
Source: Microelectronics Technology and Devices SBMICRO 2005. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GALETI, Milene et al. Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 15 nov. 2025.APA
Galeti, M., Claeys, C., Martino, J. A., & Simoen, E. (2005). Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.NLM
Galeti M, Claeys C, Martino JA, Simoen E. Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 15 ]Vancouver
Galeti M, Claeys C, Martino JA, Simoen E. Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 15 ]
