High density-PECVD silicon oxide deposition by TEOS and oxygen at low temperature (375 o. C) (2002)
Viana, Carlos Eduardo; Santos, J.L.R.; Morimoto, Nilton Itiro 
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
VIANA, Carlos Eduardo e SANTOS, J.L.R. e MORIMOTO, Nilton Itiro. High density-PECVD silicon oxide deposition by TEOS and oxygen at low temperature (375 o. C). Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 16 nov. 2025.APA
Viana, C. E., Santos, J. L. R., & Morimoto, N. I. (2002). High density-PECVD silicon oxide deposition by TEOS and oxygen at low temperature (375 o. C). In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.NLM
Viana CE, Santos JLR, Morimoto NI. High density-PECVD silicon oxide deposition by TEOS and oxygen at low temperature (375 o. C). In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 16 ]Vancouver
Viana CE, Santos JLR, Morimoto NI. High density-PECVD silicon oxide deposition by TEOS and oxygen at low temperature (375 o. C). In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 16 ]
