Gonçalves, Lucas Gonçalves Dias; Silva, Antônio Nélson Rodrigues da 
; Alfano, C.F.; Santos, J. C.; Morimoto, Nilton Itiro
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO 2002, Porto Alegre, 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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GONÇALVES, Lucas Gonçalves Dias et al. Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 16 nov. 2025.APA
Gonçalves, L. G. D., Silva, A. N. R. da, Alfano, C. F., Santos, J. C., & Morimoto, N. I. (2002). Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.NLM
Gonçalves LGD, Silva ANR da, Alfano CF, Santos JC, Morimoto NI. Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 16 ]Vancouver
Gonçalves LGD, Silva ANR da, Alfano CF, Santos JC, Morimoto NI. Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 16 ]
