ReP USP - Resultado da busca

Parte de monografia/livro
Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs (2003)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Pavanello, Marcelo Antonio
Source: Microelectronic Technology and Devices SBMicro 2003. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
NICOLETT, Aparecido Sirley e MARTINO, João Antonio e PAVANELLO, Marcelo Antonio. Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Nicolett, A. S., Martino, J. A., & Pavanello, M. A. (2003). Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Nicolett AS, Martino JA, Pavanello MA. Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Nicolett AS, Martino JA, Pavanello MA. Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
Analysis on GC SOI MOSFET analog parameters at high temperatures (2003)
Galeti, Milene; Pavanello, Marcelo Antonio ; Martino, João Antonio
Source: Microelectronic Technology and Devices SBMicro 2003. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GALETI, Milene e PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. Analysis on GC SOI MOSFET analog parameters at high temperatures. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Galeti, M., Pavanello, M. A., & Martino, J. A. (2003). Analysis on GC SOI MOSFET analog parameters at high temperatures. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Galeti M, Pavanello MA, Martino JA. Analysis on GC SOI MOSFET analog parameters at high temperatures. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Galeti M, Pavanello MA, Martino JA. Analysis on GC SOI MOSFET analog parameters at high temperatures. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
Simulations of silicon microstructure for preconcentration of metallic ions (2003)
Silva, José Alberto Fracassi da; Furlan, Rogério ; Simões, Eliphas Wagner; Silva, Maria Lucia Pereira da; Pereira, Marcos Tadeu
Source: Microelectronic Technology and Devices SBMicro 2003. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, José Alberto Fracassi da et al. Simulations of silicon microstructure for preconcentration of metallic ions. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . Disponível em: https://repositorio.usp.br/directbitstream/c522e842-8ccc-410e-9a47-c4e00003c8a1/pereira-2003-simulations%20of%20silicon%20microstructure.pdf. Acesso em: 16 nov. 2025.
APA
Silva, J. A. F. da, Furlan, R., Simões, E. W., Silva, M. L. P. da, & Pereira, M. T. (2003). Simulations of silicon microstructure for preconcentration of metallic ions. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society. Recuperado de https://repositorio.usp.br/directbitstream/c522e842-8ccc-410e-9a47-c4e00003c8a1/pereira-2003-simulations%20of%20silicon%20microstructure.pdf
NLM
Silva JAF da, Furlan R, Simões EW, Silva MLP da, Pereira MT. Simulations of silicon microstructure for preconcentration of metallic ions [Internet]. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ] Available from: https://repositorio.usp.br/directbitstream/c522e842-8ccc-410e-9a47-c4e00003c8a1/pereira-2003-simulations%20of%20silicon%20microstructure.pdf
Vancouver
Silva JAF da, Furlan R, Simões EW, Silva MLP da, Pereira MT. Simulations of silicon microstructure for preconcentration of metallic ions [Internet]. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ] Available from: https://repositorio.usp.br/directbitstream/c522e842-8ccc-410e-9a47-c4e00003c8a1/pereira-2003-simulations%20of%20silicon%20microstructure.pdf
Parte de monografia/livro
Characterization of electrospinning process using blends of polyacrylonitrile and carbon particles (2003)
Silva, Ana Neilde Rodrigues da; Furlan, Rogério ; Ramos, I.; Silva, Maria Lucia Pereira da; Fachini, E.; Santiago-Avilés, Jorge Juan
Source: Microelectronic Technology and Devices SBMicro 2003. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Subjects: MICROELETRÔNICA, BLENDAS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, Ana Neilde Rodrigues da et al. Characterization of electrospinning process using blends of polyacrylonitrile and carbon particles. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Silva, A. N. R. da, Furlan, R., Ramos, I., Silva, M. L. P. da, Fachini, E., & Santiago-Avilés, J. J. (2003). Characterization of electrospinning process using blends of polyacrylonitrile and carbon particles. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Silva ANR da, Furlan R, Ramos I, Silva MLP da, Fachini E, Santiago-Avilés JJ. Characterization of electrospinning process using blends of polyacrylonitrile and carbon particles. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Silva ANR da, Furlan R, Ramos I, Silva MLP da, Fachini E, Santiago-Avilés JJ. Characterization of electrospinning process using blends of polyacrylonitrile and carbon particles. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
Photoconductivity of semi-insulating polysilicon (2003)
Lantin, Daniela Garrote; Onoda, Edyr; Zambom, Luís da Silva ; Mansano, Ronaldo Domingues
Source: Microelectronic Technology and Devices SBMicro 2003. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LANTIN, Daniela Garrote et al. Photoconductivity of semi-insulating polysilicon. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Lantin, D. G., Onoda, E., Zambom, L. da S., & Mansano, R. D. (2003). Photoconductivity of semi-insulating polysilicon. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Lantin DG, Onoda E, Zambom L da S, Mansano RD. Photoconductivity of semi-insulating polysilicon. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Lantin DG, Onoda E, Zambom L da S, Mansano RD. Photoconductivity of semi-insulating polysilicon. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
Self-sustained bridges of a-SiC:H obtained by PECVD technique (2003)
Paez Carreño, Marcelo Nelson ; Lopes, Alexandre Tavares
Source: Microelectronic Technology and Devices SBMicro 2003. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAEZ CARREÑO, Marcelo Nelson e LOPES, Alexandre Tavares. Self-sustained bridges of a-SiC:H obtained by PECVD technique. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Paez Carreño, M. N., & Lopes, A. T. (2003). Self-sustained bridges of a-SiC:H obtained by PECVD technique. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Paez Carreño MN, Lopes AT. Self-sustained bridges of a-SiC:H obtained by PECVD technique. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Paez Carreño MN, Lopes AT. Self-sustained bridges of a-SiC:H obtained by PECVD technique. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]

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