Reis, Ronaldo Willian; Santos Filho, Sebastião Gomes dos 
; Doi, Ioshiaki; Swart, Jacobus Willibrordus
Fonte: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
REIS, Ronaldo Willian et al. Formation of nickel silicides onto (100) silicon wafer surfaces using a thin platinum interlayer. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.APA
Reis, R. W., Santos Filho, S. G. dos, Doi, I., & Swart, J. W. (2003). Formation of nickel silicides onto (100) silicon wafer surfaces using a thin platinum interlayer. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.NLM
Reis RW, Santos Filho SG dos, Doi I, Swart JW. Formation of nickel silicides onto (100) silicon wafer surfaces using a thin platinum interlayer. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]Vancouver
Reis RW, Santos Filho SG dos, Doi I, Swart JW. Formation of nickel silicides onto (100) silicon wafer surfaces using a thin platinum interlayer. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
