Fully analytical compact model for the I-V characteristics of resonant tunneling diodes (2021)
Celino, Daniel Ricardo; Souza, Adelcio Marques de; Plazas, Caio Luiz Machado Pereira; Ragi, Regiane; Romero, Murilo Araujo 
Subjects: POTENCIAL ELÉTRICO, CIRCUITOS ELETRÔNICOS, ENGENHARIA ELÉTRICA
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CELINO, Daniel Ricardo et al. Fully analytical compact model for the I-V characteristics of resonant tunneling diodes. 2021, Anais.. Piscataway, NJ, USA: IEEE, 2021. Disponível em: https://doi.org/10.1109/SBMicro50945.2021.9585749. Acesso em: 28 nov. 2025.APA
Celino, D. R., Souza, A. M. de, Plazas, C. L. M. P., Ragi, R., & Romero, M. A. (2021). Fully analytical compact model for the I-V characteristics of resonant tunneling diodes. In . Piscataway, NJ, USA: IEEE. doi:10.1109/SBMicro50945.2021.9585749NLM
Celino DR, Souza AM de, Plazas CLMP, Ragi R, Romero MA. Fully analytical compact model for the I-V characteristics of resonant tunneling diodes [Internet]. 2021 ;[citado 2025 nov. 28 ] Available from: https://doi.org/10.1109/SBMicro50945.2021.9585749Vancouver
Celino DR, Souza AM de, Plazas CLMP, Ragi R, Romero MA. Fully analytical compact model for the I-V characteristics of resonant tunneling diodes [Internet]. 2021 ;[citado 2025 nov. 28 ] Available from: https://doi.org/10.1109/SBMicro50945.2021.9585749
