Behavior of graded channel SOI gate-all-around NMOSFET devices at high temperatures (2004)
Santos, Carolina Davanzzo Gomes dos; Pavanello, Marcelo Antonio 
; Martino, João Antonio ; Flandre, Denis ; Raskin, Jean-Pierre
Fonte: Microelectronic technology and Devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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SANTOS, Carolina Davanzzo Gomes dos et al. Behavior of graded channel SOI gate-all-around NMOSFET devices at high temperatures. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 15 nov. 2025.APA
Santos, C. D. G. dos, Pavanello, M. A., Martino, J. A., Flandre, D., & Raskin, J. -P. (2004). Behavior of graded channel SOI gate-all-around NMOSFET devices at high temperatures. In Microelectronic technology and Devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.NLM
Santos CDG dos, Pavanello MA, Martino JA, Flandre D, Raskin J-P. Behavior of graded channel SOI gate-all-around NMOSFET devices at high temperatures. Microelectronic technology and Devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 15 ]Vancouver
Santos CDG dos, Pavanello MA, Martino JA, Flandre D, Raskin J-P. Behavior of graded channel SOI gate-all-around NMOSFET devices at high temperatures. Microelectronic technology and Devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 15 ]
