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Filtros : "International Symposium on Microelectronics Technology and Devices" "HUANCA, DANILO ROQUE" Limpar

Filtros

Trabalho de evento
Porous silicon photonic crystals: influence of electrolyte composition on the nanostructure and the optical response (2012)
Roque Huanca, Danilo ; Elias, Vinícius F; Salcedo, Walter Jaimes
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ROQUE HUANCA, Danilo e ELIAS, Vinícius F e SALCEDO, Walter Jaimes. Porous silicon photonic crystals: influence of electrolyte composition on the nanostructure and the optical response. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0315ecst. Acesso em: 17 nov. 2025.
APA
Roque Huanca, D., Elias, V. F., & Salcedo, W. J. (2012). Porous silicon photonic crystals: influence of electrolyte composition on the nanostructure and the optical response. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0315ecst
NLM
Roque Huanca D, Elias VF, Salcedo WJ. Porous silicon photonic crystals: influence of electrolyte composition on the nanostructure and the optical response [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 nov. 17 ] Available from: https://doi.org/10.1149/04901.0315ecst
Vancouver
Roque Huanca D, Elias VF, Salcedo WJ. Porous silicon photonic crystals: influence of electrolyte composition on the nanostructure and the optical response [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 nov. 17 ] Available from: https://doi.org/10.1149/04901.0315ecst
Trabalho de evento
Hafnium aluminates deposited by atomic layer deposition: structural characterization by X-ray spectroscopy (2012)
Huanca, Danilo Roque ; Christiano, Veronica; Adelmann, Christoph; Kellerman, Guinther ; Verdonck, Patrick Bernard; Santos Filho, Sebastião Gomes dos
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HUANCA, Danilo Roque et al. Hafnium aluminates deposited by atomic layer deposition: structural characterization by X-ray spectroscopy. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0383ecst. Acesso em: 17 nov. 2025.
APA
Huanca, D. R., Christiano, V., Adelmann, C., Kellerman, G., Verdonck, P. B., & Santos Filho, S. G. dos. (2012). Hafnium aluminates deposited by atomic layer deposition: structural characterization by X-ray spectroscopy. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0383ecst
NLM
Huanca DR, Christiano V, Adelmann C, Kellerman G, Verdonck PB, Santos Filho SG dos. Hafnium aluminates deposited by atomic layer deposition: structural characterization by X-ray spectroscopy [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 nov. 17 ] Available from: https://doi.org/10.1149/04901.0383ecst
Vancouver
Huanca DR, Christiano V, Adelmann C, Kellerman G, Verdonck PB, Santos Filho SG dos. Hafnium aluminates deposited by atomic layer deposition: structural characterization by X-ray spectroscopy [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 nov. 17 ] Available from: https://doi.org/10.1149/04901.0383ecst

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