Liquid helium temperature operation of graded-channel SOI nMOSFETs (2012)
Souza, Michelly de 
; Kilchytska, Valeriya ; Flandre, Denis ; Pavanello, Marcelo Antonio
Fonte: Microelectronics technology and devices, SBMicro. Nome do evento: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SOUZA, Michelly de et al. Liquid helium temperature operation of graded-channel SOI nMOSFETs. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0135ecst. Acesso em: 18 nov. 2025.APA
Souza, M. de, Kilchytska, V., Flandre, D., & Pavanello, M. A. (2012). Liquid helium temperature operation of graded-channel SOI nMOSFETs. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0135ecstNLM
Souza M de, Kilchytska V, Flandre D, Pavanello MA. Liquid helium temperature operation of graded-channel SOI nMOSFETs [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 nov. 18 ] Available from: https://doi.org/10.1149/04901.0135ecstVancouver
Souza M de, Kilchytska V, Flandre D, Pavanello MA. Liquid helium temperature operation of graded-channel SOI nMOSFETs [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 nov. 18 ] Available from: https://doi.org/10.1149/04901.0135ecst
