Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs. (2012)
Bühler, Rudolf Theoderich 
; Agopian, Paula Ghedini Der ; Simoen, Eddy ; Claeys, Cor ; Martino, João Antonio
Fonte: Microelectronics technology and devices, SBMicro. Nome do evento: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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BÜHLER, Rudolf Theoderich et al. Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0145ecst. Acesso em: 18 nov. 2025.APA
Bühler, R. T., Agopian, P. G. D., Simoen, E., Claeys, C., & Martino, J. A. (2012). Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0145ecstNLM
Bühler RT, Agopian PGD, Simoen E, Claeys C, Martino JA. Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs. [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 nov. 18 ] Available from: https://doi.org/10.1149/04901.0145ecstVancouver
Bühler RT, Agopian PGD, Simoen E, Claeys C, Martino JA. Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs. [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 nov. 18 ] Available from: https://doi.org/10.1149/04901.0145ecst
